Light-emitting diode

• US 10,707,380 B2
• Filed: 09/30/2018
• Issued: 07/07/2020
• Est. Priority Date: 10/24/2017
• Status: Active Grant

• Current Assignee: Quanzhou Sanan Semiconductor Technology Co., Ltd. (Sanan Optoelectronics Company Limited)
• Original Assignee: Xiamen Sanan Optoelectronics Technology Company Limited (Sanan Optoelectronics Company Limited)
• Inventors: Zheng, Gaolin, Wu, Hou-Jun, He, Anhe, Liu, Shiwei, Peng, Kang-Wei, Lin, Su-Hui, Chang, Chia-Hung
• Primary Examiner(s): Tran, Long K
• Application Number:
  US16/147,763
• Publication Number:
  US 20190123243A1
• Time in Patent Office: 646 Days
• Field of Search: 257 99
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer disposed between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer; and a second electrode disposed over and electrically coupled to said second semiconductor layer; wherein: the first electrode includes a plurality of first sub-electrodes; the second electrode includes a plurality of second sub-electrodes; and any two adjacent first sub-electrodes and/or second sub-electrodes have a same projection distance.

Claims

1. A light-emitting diode, comprising:

a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer disposed between the first and second semiconductor layers;

a first electrode electrically coupled to the first semiconductor layer; and

a second electrode disposed over and electrically coupled to said second semiconductor layer;

wherein;

the first electrode includes a plurality of first sub-electrodes;

the second electrode includes a plurality of second sub-electrodes; and

any two adjacent first sub-electrodes and/or second sub-electrodes have a same projection distance;

wherein;

the first electrode and/or second electrode include(s) six sub-electrodes forming a minimal unit of closely-packed hexagonal structure;

the six sub-electrodes are composed of one or more of the first sub-electrodes, the second sub-electrodes, or a combination of the first sub-electrodes and the second sub-electrodes.

2. The light-emitting diode of claim 1, wherein the closely-packed hexagonal structure includes one first sub-electrode or one second sub-electrode as a center.

3. The light-emitting diode of claim 1, wherein the closely-packed hexagonal structure includes six first sub-electrodes, or six second sub-electrodes, or two first sub-electrodes and four second sub-electrodes, or four first sub-electrodes and two second sub-electrodes.

4. The light-emitting diode of claim 1, wherein the closely-packed hexagonal structure includes three first sub-electrodes and three second sub-electrodes.

5. The light-emitting diode of claim 4, wherein the first sub-electrodes and second sub-electrodes are arranged in a staggered manner.

6. The light-emitting diode of claim 5, wherein:

the three first sub-electrodes constitute one minimal unit of equilateral triangle; and

the three second sub-electrodes constitute one minimal unit of equilateral triangle.

7. The light-emitting diode of claim 1, wherein a number of said first sub-electrodes is smaller than or equal to a number of second sub-electrodes.

8. The light-emitting diode of claim 1, wherein a ratio of the first sub-electrodes to the second sub-electrodes ranges from 0.3-0.9.

9. The light-emitting diode of claim 1, wherein:

a distance between two adjacent first sub-electrodes is 10-150 μ

m; and

a distance between two adjacent second sub-electrodes is 10-150 μ

m.

10. A light-emitting diode, comprising:

a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer between the first and second semiconductor layers;

a first electrode electrically coupled to the first semiconductor layer and including a plurality of first sub-electrodes;

a second electrode disposed over and electrically coupled to the second semiconductor layer, and including a plurality of second sub-electrodes;

a third electrode coupled to the plurality of first sub-electrodes and including a plurality of third sub-electrodes;

a fourth electrode coupled to the plurality of second sub-electrodes and including a plurality of fourth sub-electrodes;

wherein any two adjacent first sub-electrodes and/or second sub-electrodes have a same projection distance.

11. The light-emitting diode of claim 10, wherein a ratio between the third sub-electrodes to the fourth sub-electrodes is greater than or equal to 2:

1.

12. The light-emitting diode of claim 10, wherein the third sub-electrodes have straight or curved strip pattern.

13. The light-emitting diode of claim 12, wherein the curved strip pattern includes an S-shaped pattern or a Z-shaped pattern.

14. The light-emitting diode of claim 10, wherein the third sub-electrodes have a same or different shapes.

15. The light-emitting diode of claim 10, wherein adjacent third sub-electrodes have one or more second sub-electrodes placed therebetween.

16. The light-emitting diode of claim 15, wherein the one or more second sub-electrodes placed between have the same or similar patterns with neighboring third sub-electrodes.

17. The light-emitting diode of claim 10, wherein the fourth sub-electrodes have a hollow pattern.

18. The light-emitting diode of claim 10, further comprising a fifth electrode and a sixth electrode, wherein the fifth electrode is coupled to the several third sub-electrodes, and the sixth electrode is coupled to the plurality of fourth sub-electrodes.

19. The light-emitting diode of claim 18, wherein the fifth electrode and sixth electrode have the same shape and are arranged symmetrically.