Complementary metal oxide semiconductor (CMOS) ultrasonic transducers and methods for forming the same
First Claim
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1. An ultrasonic transducer apparatus, comprising:
- a substrate comprising;
an integrated circuit; and
a metal layer electrically connected to the integrated circuit;
one or more standoff structures disposed on an uppermost portion of the substrate;
a membrane bonded to the one or more standoff structures such that a sealed cavity exists between the uppermost portion of the substrate and a bottommost portion of the membrane, thereby defining, at least in part, an ultrasonic transducer; and
a conductive material extending from the metal layer, through one of the one or more standoff structures, and to an uppermost portion of the membrane.
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Abstract
Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
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Citations
21 Claims
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1. An ultrasonic transducer apparatus, comprising:
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a substrate comprising; an integrated circuit; and a metal layer electrically connected to the integrated circuit; one or more standoff structures disposed on an uppermost portion of the substrate; a membrane bonded to the one or more standoff structures such that a sealed cavity exists between the uppermost portion of the substrate and a bottommost portion of the membrane, thereby defining, at least in part, an ultrasonic transducer; and a conductive material extending from the metal layer, through one of the one or more standoff structures, and to an uppermost portion of the membrane. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method, comprising:
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forming one or more first standoff structures on an uppermost portion of a substrate, the substrate comprising; an integrated circuit; and a metal layer electrically connected to the integrated circuit; bonding a membrane to the one or more first standoff structures such that a sealed cavity exists between the uppermost portion of the substrate and a bottommost portion of the membrane, thereby defining, at least in part, an ultrasonic transducer; and forming a conductive material extending from the metal layer, through one of the one or more first standoff structures, and to an uppermost portion of the membrane. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. An ultrasonic transducer apparatus, comprising:
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a substrate comprising; an integrated circuit; and a metal layer electrically connected to the integrated circuit; one or more standoff structures disposed on an uppermost portion of the substrate; a membrane bonded to the one or more standoff structures such that a sealed cavity exists between the uppermost portion of the substrate and a bottommost portion of the membrane, thereby defining, at least in part, an ultrasonic transducer, and such that the one or more standoff structures create a standoff between the substrate and the membrane; and a layer disposed in a portion of the sealed cavity such that the portion of the sealed cavity has a smaller depth than another portion of the sealed cavity. - View Dependent Claims (20, 21)
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Specification