Low-temperature voltage reference using coulomb blockade mechanism

• US 10,712,760 B2
• Filed: 06/25/2019
• Issued: 07/14/2020
• Est. Priority Date: 06/29/2018
• Status: Active Grant

• Current Assignee: IMEC International
• Original Assignee: IMEC International
• Inventors: Hiblot, Gaspard, Parvais, Bertrand
• Primary Examiner(s): Mehari, Yemane
• Application Number:
  US16/452,143
• Publication Number:
  US 20200004285A1
• Time in Patent Office: 385 Days
• Field of Search: 323313, 323316, 257 30
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G05F 1/595 semiconductor devices connected in series
• CPC Class Codes: G05F 3/16 being semiconductor devices
• CPC Class Codes: H01L 29/7613 Single electron transistors; Coulomb blockade devices H01L29/7888 takes precedence

Abstract

Example embodiments relate to low-temperature voltage references using Coulomb blockade mechanisms. One embodiment includes a method of generating a reference voltage. The method includes providing a first single-electron transistor (SET) and a second SET connected in series. The method also includes biasing the first SET and the second SET using a same biasing current (I_b). Further, the method includes operating the first SET at a slope of a first Coulomb peak and the second SET at a slope of a second Coulomb peak. The slope of the first Coulomb peak and the second Coulomb peak are of the same slope type selected from a rising slope, a peak maximum, and a falling slope. The second Coulomb peak is different from the first Coulomb peak. Additionally, the method includes generating the reference voltage (V_ref) based on a difference between gate-to-source voltages of the first SET (V_gs1) and the second SET (V_gs2).

Claims

1. A method of generating a reference voltage, comprising:

providing a first single-electron transistor (SET) and a second SET connected in series with the first SET;

biasing the first SET and the second SET using a same biasing current (I_b);

operating the first SET at a slope of a first Coulomb peak, wherein the slope of the first Coulomb peak is of a slope type selected from a rising slope, a peak maximum, and a falling slope;

operating the second SET at a slope of a second Coulomb peak, wherein the second Coulomb peak is different from the first Coulomb peak, and wherein the slope of the second Coulomb peak is of the same slope type as the slope of the first Coulomb peak; and

generating the reference voltage (V_ref) based on a difference between a gate-to-source voltage (V_gs1) of the first SET and a gate-to-source voltage (V_gs2) of the second SET.

2. The method of claim 1, wherein connecting the first SET and the second SET in series comprises connecting a drain terminal of the first SET to a source terminal of the second SET.

3. The method of claim 1, wherein the first SET and the second SET comprise underlapped MOSFETs, metallic islands, nanotubes, single-electron molecules, or epitaxial electron-boxes.

4. The method of claim 1, wherein operating the first SET and the second SET at the same slope type comprises making operation at different slope types unstable.

5. The method of claim 4, wherein making operation at different slope types unstable comprises:

sensing a drain voltage (V_d1;

V_d2) of at least one of the first SET and the second SET as a feedback voltage; and

regulating a current through the first SET and the second SET based on the feedback voltage.

6. The method of claim 5, wherein regulating the current through the first SET and the second SET based on the feedback voltage comprises using a feedback regulation element adapted to regulate the current through the first SET and the second SET based on the feedback voltage.

7. The method of claim 1, wherein operating the first SET and the second SET at slopes of different Coulomb peaks comprises using at least one window selector circuit.

8. The method of claim 7, wherein the at least one window selector circuit is adapted to restrict a current through the first SET and the second SET if:

the gate-to-source voltage of the first SET is outside a first voltage window ([V₁, V₂]) around the first Coulomb peak;

or

the gate-to-source voltage of the second SET is outside a second voltage window ([V₂, V₃]) around the second Coulomb peak.

9. A reference voltage generator, comprising:

a first single-electron transistor (SET) and a second SET connected in series with the first SET;

a current biasing circuit adapted to bias the first SET and the second SET using a same biasing current (I_b);

at least one window selector circuit adapted to cause the first SET to operate at a slope of a first Coulomb peak and to cause the second SET to operate at a slope of a second Coulomb peak, wherein the second Coulomb peak is different from the first Coulomb peak;

a feedback loop circuit adapted to further operate the first SET and the second SET such that a slope type of the slope of the first Coulomb peak and a slope type of the slope of the second Coulomb peak are a same slope type selected from a rising slope, a peak maximum, and a falling slope; and

an output circuit adapted to output a reference voltage (V_ref) based on a difference between a gate-to-source voltage (V_gs1) of the first SET and a gate-to-source (V_gs2) voltage of the second SET.

10. The reference voltage generator of claim 9, wherein the first SET and the second SET are connected in series by connecting a drain terminal of the first SET to a source terminal of the second SET.

11. The reference voltage generator of claim 9, wherein the first SET and the second SET comprise underlapped MOSFETs, metallic islands, nanotubes, single-electron molecules, or epitaxial electron-boxes.

12. The reference voltage generator of claim 9, wherein the at least one window selector circuit comprises:

circuitry adapted to;

detect a first condition where the gate-to-source voltage of the first SET is outside a first voltage window ([V₁, V₂]) around the first Coulomb peak; and

detect a second condition wherein the gate-to-source voltage of the second SET is outside a second voltage window ([V₂, V₃]) around the second Coulomb peak; and

at least one window switching element adapted to restrict a current through the first SET and the second SET if the first condition or the second condition is satisfied.

13. The reference voltage generator of claim 12, wherein the window switching element is a transistor.

14. The reference voltage generator of claim 9, wherein the feedback loop circuit comprises a feedback regulation element controlled by a drain voltage (V_d1;

V_d2) of at least one of the first SET and the second SET and adapted to regulate a current through the first SET and the second SET based on the drain voltage.

15. The reference voltage generator of claim 14, wherein the feedback regulation element is adapted to increase the current through the first SET and the second SET if the drain voltage is decreasing, thereby making one type of slope unstable.

16. The reference voltage generator of claim 14, wherein the feedback regulation element is a transistor.