Sub-bandgap reference voltage source

• US 10,712,763 B2
• Filed: 12/03/2019
• Issued: 07/14/2020
• Est. Priority Date: 12/18/2018
• Status: Active Grant

• Current Assignee: NXP USA, Inc. (NXP Semiconductors NV)
• Original Assignee: NXP USA, Inc. (NXP Semiconductors NV)
• Inventors: Mouret, Guillaume, Sicard, Thierry Michel Alain, Pigott, John
• Primary Examiner(s): Luu, An T
• Application Number:
  US16/701,393
• Publication Number:
  US 20200192414A1
• Time in Patent Office: 224 Days
• CPC Class Codes: G05F 3/267 using both bipolar and field-effect technology
• CPC Class Codes: G05F 3/30 Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities G05F3/26 takes precedence

Abstract

The present application relates to a sub-bandgap reference source circuit, which comprises a current mirror source, a first branch comprising a first BJT and a second branch comprising a second BJT, the first BJT having an emitter current density lower than an emitter current density of the second BJT, the first branch and the second branch being connected at a first node coupled to ground; a first voltage divider comprising first and second resistances coupled in series, the first resistance being coupled between a base terminal of the first BJT and a second node, the second resistor being coupled to ground; a second voltage divider comprising first and second resistances coupled in series, the first resistance being coupled between the second node and a base terminal of the second BJT, the second resistance being coupled to the first node; and an output terminal coupled to the second node.

Claims

1. A sub-bandgap reference source circuit, comprising:

a current mirror source arranged to supply a same current to

a first branch comprising a first bipolar junction transistor, BJT, and a second branch comprising a second bipolar junction transistor, BJT,

wherein the first BJT has an emitter current density, which is lower than the emitter current density of the second BJT,

wherein the first branch and the second branch are connected at a first node, which is coupled to ground,

a first voltage divider comprising a first resistance and a second resistance coupled in series, wherein the first resistance is coupled between a base terminal of the first BJT and a second node, wherein the second resistor is coupled to ground;

a second voltage divider comprising a third resistance and a fourth resistance coupled in series, wherein the third resistance is coupled between the second node and a base terminal of the second BJT, wherein the fourth resistance, is coupled to the first node; and

an output terminal coupled to the second node.

2. The sub-bandgap reference source circuit according to claim 1, wherein the first and second BJTs are npn-type bipolar transistors.

3. The sub-bandgap reference source circuit according to claim 1, further comprising:

a supply voltage rail coupled to the current mirror source.

4. The sub-bandgap reference source circuit according to claim 3, further comprising:

a transistor having a first current terminal coupled to the supply voltage rail, a second current terminal coupled to the second node and a control terminal coupled to the second branch.

5. The sub-bandgap reference source circuit according to claim 4, wherein the first current terminal is a drain terminal and the second current terminal is a source terminal.

6. The sub-bandgap reference source circuit according to claim 1, further comprising:

a bias resistance coupled between the first node and ground.

7. The sub-bandgap reference source circuit according to claim 1,

wherein at least one of the first resistance and the second resistance of the first voltage divider is a trimmable resistance.

8. The sub-bandgap reference source circuit according to claim 1,

wherein at least one of the first resistance and the second resistance of the second voltage divider is a trimmable resistance.

9. The sub-bandgap reference source circuit according to claim 1, wherein the emitter density of the first BJT is higher than the emitter density of the second BJT by a factor higher than 1.

10. The sub-bandgap reference source circuit according to claim 1, wherein the current mirror source comprises two transistors, wherein gate terminals of the two transistors are connected to each other and to a drain terminal of one of the two transistors.

11. The sub-bandgap reference source circuit according to claim 1,

wherein the first BJT has a collector terminal coupled to the current mirror source and an emitter terminal coupled to the first node,

wherein the second BJT has a collector terminal coupled to the current mirror source and an emitter terminal coupled to the first node.

12. The sub-bandgap reference source circuit according to claim 1, further comprising a third branch supplied by the current mirror source with the a second current, wherein the third branch includes:

a third bipolar junction transistor, BJT, and a resistance coupled between the current mirror source and a base terminal; and

a current mirror coupled between the base terminal of the third BJT and ground, wherein the current mirror is further coupled between the first node and ground.

13. The sub-bandgap reference source circuit according to claim 12, wherein the same current and the second current have a predetermined fixed ratio.

14. The sub-bandgap reference source circuit according to claim 11, wherein the third BJT is a pnp-type bipolar transistor.

15. The sub-bandgap reference source circuit according to claim 11, wherein the current mirror comprises two transistors, wherein gate terminals of the two transistors are connected to each other and to a drain terminal of one of the two transistors, which is coupled to the base terminal of the third BJT.