Self limiting lateral atomic layer etch

• US 10,714,354 B2
• Filed: 03/01/2017
• Issued: 07/14/2020
• Est. Priority Date: 08/19/2015
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Kamp, Tom, Rastgar, Neema, Drymon, Michael Carl
• Primary Examiner(s): Lund, Jeffrie R
• Application Number:
  US15/447,005
• Publication Number:
  US 20170178917A1
• Time in Patent Office: 1,231 Days
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 37/32091 the radio frequency energy being capacitively coupled to the plasma
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/3211 Antennas, e.g. particular shapes of coils
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow
• CPC Class Codes: H01L 21/0223 formation by oxidation, e.g. oxidation of the substrate
• CPC Class Codes: H01L 21/02238 silicon in uncombined form, i.e. pure silicon
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/3081 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/67069 for drying etching

Abstract

Methods of and apparatuses for laterally etching semiconductor substrates using an atomic layer etch process involving exposing an oxidized surface of a semiconductor substrate to a fluorine-containing etch gas and heating the substrate to remove non-volatile etch byproducts by a sublimation mechanism are provided herein. Methods also including additionally pulsing a hydrogen-containing gas when pulsing the fluorine-containing etch gas. Apparatuses also include an ammonia mixing manifold suitable for separately preparing and mixing ammonia for use in various tools.

Claims

1. An apparatus for processing a substrate, the apparatus comprising:

a process chamber;

a gas box having a plurality of first outlets and a second outlet that are both fluidly connected with the process chamber via a plurality of top inlets and a side inlet;

a mixing chamber for mixing ammonia with one or more of the process gases, the mixing chamber separate from the gas box, fluidly connected to the plurality of first outlets, fluidly connected with the plurality of top inlets and the side inlet, and fluidly interposed between the first outlet, and the plurality of top inlets and the side inlet such that;

gas is configured to flow from the plurality of first outlets, through the mixing chamber, and to the plurality of top inlets and the side inlet, and

gas is configured to flow from the second outlet and to the plurality of top inlets and the side inlet without flowing through the mixing chamber;

a first set of parallel valves fluidly interposed between the mixing chamber, and the plurality of top inlets and the side inlet, and configured to control the flow of gas between the mixing chamber and the plurality of top inlets and the side inlet;

a second set of parallel valves fluidly interposed between the second outlet, and the plurality of top inlets and the side inlet, and configured to control the flow of gas between the second outlet and the plurality of top inlets and the side inlet;

a first gas source in the gas box comprising an oxidant and fluidly connected to one of the first outlets;

a second gas source in the gas box comprising a fluorine-containing etchant and fluidly connected to another one of the first outlets;

a heater configured to heat a substrate in the process chamber; and

a controller having at least one processor and a memory, wherein;

the at least one processor and the memory are communicatively connected with one another,

the memory stores non-transient, computer-executable instructions for controlling the at least one processor to control the gas box, the first set of parallel valves, and the second set of parallel valves to;

(i) cause the oxidant gas to flow to the process chamber housing a substrate to conformally oxidize surface of a feature in a semiconductor layer of the substrate to form an oxidized surface,

(ii) cause, after (i), the fluorine-containing etchant gas to flow to the process chamber housing the substrate to expose the substrate to the fluorine-containing etchant gas to isotropically etch the oxidized surface of the substrate in a self-limiting reaction selective to non-oxidized semiconductor material,

(iii) cause, after (ii), the heater to heat the substrate to remove non-volatile solid etch byproducts by sublimation, and

(iv) repeat (i), (ii), and (iii).

2. The apparatus of claim 1, wherein the mixing chamber is a mixing manifold.

3. The apparatus of claim 1, further comprising a third gas source in the gas box comprising ammonia and fluidically connected to one of the first outlets, wherein the memory further includes instructions to (v) cause, during (ii), the ammonia to flow from the mixing chamber to the process chamber.

4. The apparatus of claim 3, wherein the memory further includes instructions to repeat (i) through (v).

5. The apparatus of claim 1, further comprising a purge gas source comprising a purge gas, wherein the memory further includes instructions to (vi) cause, after (ii), the purge gas to flow to the process chamber.

6. The apparatus of claim 1, further comprising a fourth gas source comprising a hydrogen-containing gas, wherein the memory further includes instructions to (vii) cause, during (ii), the hydrogen-containing gas to flow to the process chamber.

7. The apparatus of claim 1, further comprising a plasma generator, wherein the memory further includes instructions to (viii) cause, during (i), the plasma generator to generate a plasma in the process chamber.

8. The apparatus of claim 1, further comprising a vacuum pump configured to evacuate gases from the process chamber, wherein the memory further includes instructions to (ix) cause the vacuum pump to set the process chamber to a chamber pressure less than about 10 Torr.

9. The apparatus of claim 8, wherein memory further includes instructions to (x) cause the vacuum pump to set the process chamber at a chamber pressure between about 5 mTorr and about 400 mTorr.

10. The apparatus of claim 1, wherein performing (i) through (iii) causes the substrate to be etched laterally.

11. The apparatus of claim 1, wherein performing (i) through (iii) removes semiconductor material in monolayer increments.

12. The apparatus of claim 1, wherein performing (i) through (iii) causes the starting and ending profile of the etched portion of the feature to have linear edges.

13. The apparatus of claim 1, wherein performing (i) through (iii) causes the semiconductor material to be laterally etched under a hard mask on the substrate.

14. The apparatus of claim 1, wherein:

the first set of parallel valves includes a first valve and a second valve,

the first valve is configured to control the flow of gas between the mixing chamber and the plurality of top inlets,

the second valve is configured to control the flow of gas between the mixing chamber and the side inlet.

15. The apparatus of claim 14, wherein:

the second set of parallel valves includes a third valve and a fourth valve,

the third valve is configured to control the flow of gas between the second outlet and the plurality of top inlets,

the fourth valve is configured to control the flow of gas between the second outlet and the side inlet.

16. The apparatus of claim 1, further comprising a third set of valves, wherein:

the plurality of top inlets includes;

a center gas inlet configured to flow gas onto the center of a substrate positioned on a chuck in the process chamber, and

an edge inlet configured to flow gas onto an edge of the substrate positioned on the chuck, and

the third set of valves is configured to control flow of gas to the center inlet and the side inlet.