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Semiconductor device and manufacturing method thereof

  • US 10,714,358 B2
  • Filed: 11/21/2019
  • Issued: 07/14/2020
  • Est. Priority Date: 12/04/2009
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device comprising:

  • forming an oxide semiconductor layer containing indium by sputtering method;

    forming a conductive film comprising a region in contact with the oxide semiconductor layer; and

    etching the conductive film for forming a source electrode and a drain electrode and etching a region of the oxide semiconductor layer which is not covered by the source electrode or the drain electrode,wherein the oxide semiconductor layer comprises a region in which a c-axis of a crystal is aligned along a direction perpendicular to a surface of the oxide semiconductor layer.

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