Selective deposition of tungsten

• US 10,714,385 B2
• Filed: 06/06/2017
• Issued: 07/14/2020
• Est. Priority Date: 07/19/2016
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: Kovalgin, Alexey Y., Yang, Mengdi, Aarnink, Antonius A. I., Wolters, Rob A. M.
• Primary Examiner(s): Kebede, Brooke
• Application Number:
  US15/615,489
• Publication Number:
  US 20180025939A1
• Time in Patent Office: 1,134 Days
• Field of Search: 438643, 438758, 438772, 438777, 438785
• CPC Class Codes: C23C 16/04 Coating on selected surface areas, e.g. using masks
• CPC Class Codes: C23C 16/045 Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• CPC Class Codes: C23C 16/06 characterised by the deposition of metallic material
• CPC Class Codes: C23C 16/14 Deposition of only one other metal element
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: C23C 16/56 After-treatment
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76849 the layer being positioned on top of the main fill metal
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers

Abstract

A method for selectively depositing a metal film onto a substrate is disclosed. In particular, the method comprising flowing a metal precursor onto the substrate and flowing a non-metal precursor onto the substrate, while contacting the non-metal precursor with a hot wire. Specifically, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten film, where the hydrogen precursor is excited by a tungsten hot wire.

Claims

1. A method of selectively forming a film comprising metal, the method comprising:

providing a substrate for processing in a reaction chamber and a hot wire for contacting at least a gas;

exposing the substrate to a metal precursor; and

exposing the substrate to a gas which has been exposed to a vicinity of the hot wire;

wherein the substrate comprises at least two different materials and the metal film is selectively formed in one of the at least two different materials.

2. The method of claim 1, wherein the metal precursor comprises transition metal element.

3. The method of claim 1, wherein the metal precursor comprises a tungsten-containing precursor or a molybdenum-containing precursor.

4. The method of claim 1, wherein the gas comprises hydrogen.

5. The method of claim 1, wherein the selectively formed film comprises metallic material.

6. The method of claim 1, wherein an excited, radical or atomic species is formed from the gas when the gas has been exposed to a vicinity of the hot wire.

7. The method of claim 1, wherein the substrate comprises a first surface and a second surface.

8. The method of claim 7, wherein the first surface comprises a transition metal.

9. The method of claim 7, wherein the first surface comprises an oxidized metal, and underneath the oxidized metal is an elemental metal or metallic conductive film.

10. The method of claim 7, wherein the second surface comprises Si—

O bonds.

11. The method of claim 7, wherein the second surface comprise silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, silicon dioxide, or mixtures thereof.

12. The method of claim 7, wherein the film is selectively formed on the first surface.

13. The method of claim 1, further comprising the step of exposing the substrate to a purge gas after the steps of exposing the substrate to the metal precursor.

14. The method of claim 1, wherein a selectivity is above 50%.

15. The method of claim 1, wherein the thickness of the film as above 1 nm.

16. The method of claim 1, wherein a wall in the reaction chamber is a hot wall.

17. The method of claim 1, wherein selectively forming the film comprises an ALD process.

18. The method of claim 1, wherein selectively forming the film comprises a cyclic process.

19. The method of claim 1, wherein selectively forming the film comprises cyclic or sequential CVD process.

20. A reaction chamber, configured to perform the method of claim 1.