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Shielded trench devices

  • US 10,714,574 B2
  • Filed: 03/25/2019
  • Issued: 07/14/2020
  • Est. Priority Date: 05/08/2018
  • Status: Active Grant
First Claim
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1. A trench device comprising:

  • a semiconductor layer of a first conductivity type;

    a shield region of a second conductivity type in the semiconductor layer;

    a shield polysilicon region of the second conductivity type on the shield region and confined laterally by first dielectric spacers;

    a dielectric layer on the shield polysilicon region; and

    a trench gate structure on the dielectric layer.

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