Method and structure for FinFET devices
First Claim
1. A method comprising:
- providing a substrate that includes a first region doped with a first dopant of a first type and a second region doped with a second dopant of a second type that is different from the first type;
forming a first semiconductor layer on the second region such that at least part of the first region is free of the first semiconductor layer, wherein the first semiconductor layer includes a third dopant of the second type;
forming a second semiconductor layer on the first region such that at least part of the second region is free of the second semiconductor layer, wherein the second semiconductor layer includes a fourth dopant of the first type;
recessing the first region of the substrate prior to forming the second semiconductor layer on the first region of the substrate; and
patterning the first semiconductor layer to form a first fin structure and patterning the second semiconductor layer to form a second fin structure.
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Abstract
A method includes providing a semiconductor substrate having first and second regions that are doped with first and second dopants respectively. The first and second dopants are of opposite types. The method further includes epitaxially growing a first semiconductor layer that is doped with a third dopant. The first and third dopants are of opposite types. The method further includes depositing a dielectric hard mask (HM) layer over the first semiconductor layer; patterning the dielectric HM layer to have an opening over the first region; extending the opening towards the semiconductor substrate; and epitaxially growing a second semiconductor layer in the opening. The second semiconductor layer is doped with a fourth dopant. The first and fourth dopants are of a same type. The method further includes removing the dielectric HM layer; and performing a first CMP process to planarize both the first and second semiconductor layers.
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Citations
20 Claims
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1. A method comprising:
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providing a substrate that includes a first region doped with a first dopant of a first type and a second region doped with a second dopant of a second type that is different from the first type; forming a first semiconductor layer on the second region such that at least part of the first region is free of the first semiconductor layer, wherein the first semiconductor layer includes a third dopant of the second type; forming a second semiconductor layer on the first region such that at least part of the second region is free of the second semiconductor layer, wherein the second semiconductor layer includes a fourth dopant of the first type; recessing the first region of the substrate prior to forming the second semiconductor layer on the first region of the substrate; and patterning the first semiconductor layer to form a first fin structure and patterning the second semiconductor layer to form a second fin structure. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method comprising:
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providing a substrate that includes a first region doped with a first dopant of a first type and a second region doped with a second dopant of a second type that is opposite from the first type; forming a first semiconductor layer on the second region, wherein the first semiconductor layer includes a third dopant of the second type; forming a second semiconductor layer on the first region such that the second semiconductor layer interfaces with the first semiconductor layer formed on the second region, wherein the second semiconductor layer includes a fourth dopant of the first type; and patterning the first semiconductor layer to form a first fin structure and patterning the second semiconductor layer to form a second fin structure. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A method comprising:
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providing a substrate, wherein the substrate has a first region and a second region that is adjacent to the first region, the first and second regions are doped with first and second dopants respectively, and the first and second dopants are of opposite types; recessing the second region of the substrate to form a recessed second region of the substrate; forming a first semiconductor layer on the recessed second region, wherein the first semiconductor layer is doped with a third dopant and the first and third dopants are of opposite types; recessing the first region of the substrate to form a recessed first region of the substrate; and forming a second semiconductor layer on the recessed first region, wherein the second semiconductor layer is doped with a fourth dopant and the first and fourth dopants are of a same type. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification