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Method and structure for FinFET devices

  • US 10,714,615 B2
  • Filed: 12/17/2018
  • Issued: 07/14/2020
  • Est. Priority Date: 01/27/2016
  • Status: Active Grant
First Claim
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1. A method comprising:

  • providing a substrate that includes a first region doped with a first dopant of a first type and a second region doped with a second dopant of a second type that is different from the first type;

    forming a first semiconductor layer on the second region such that at least part of the first region is free of the first semiconductor layer, wherein the first semiconductor layer includes a third dopant of the second type;

    forming a second semiconductor layer on the first region such that at least part of the second region is free of the second semiconductor layer, wherein the second semiconductor layer includes a fourth dopant of the first type;

    recessing the first region of the substrate prior to forming the second semiconductor layer on the first region of the substrate; and

    patterning the first semiconductor layer to form a first fin structure and patterning the second semiconductor layer to form a second fin structure.

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