Semiconductor device and manufacturing method thereof
First Claim
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1. A semiconductor device comprising:
- a first insulating film comprising oxygen;
an oxide semiconductor layer formed over and in contact with the first insulating film, the oxide semiconductor layer comprising indium and zinc, wherein the oxide semiconductor layer includes a channel formation region and a source region and a drain region with the channel formation region therebetween;
a gate insulating layer over the oxide semiconductor layer;
a gate electrode over the channel formation region with the gate insulating layer therebetween;
a second insulating film comprising silicon oxide over the gate electrode;
a third insulating film comprising aluminum oxide over the second insulating film; and
a source electrode and a drain electrode electrically connected to the source region and the drain region through contact holes provided in the second insulating film and the third insulating film, respectively,wherein at least a portion of the oxide semiconductor layer comprises a crystalline region where a c-axis is aligned approximately in parallel with a normal vector of a surface of the portion of the oxide semiconductor layer and a portion of the oxide semiconductor layer is amorphous,wherein an amount of oxygen released from the first insulating film is greater than or equal to 3.0×
1020 atoms/cm3 in thermal desorption spectroscopy when the amount of oxygen is converted into oxygen atoms, andwherein the source region and the drain region are selectively doped with at least one element selected from rare gases and hydrogen.
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Abstract
A semiconductor device capable of high speed operation is provided. Further, a highly reliable semiconductor device is provided. An oxide semiconductor having crystallinity is used for a semiconductor layer of a transistor. A channel formation region, a source region, and a drain region are formed in the semiconductor layer. The source region and the drain region are formed in such a manner that one or more of elements selected from rare gases and hydrogen are added to the semiconductor layer by an ion doping method or an ion implantation method with the use of a channel protective layer as a mask.
214 Citations
20 Claims
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1. A semiconductor device comprising:
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a first insulating film comprising oxygen; an oxide semiconductor layer formed over and in contact with the first insulating film, the oxide semiconductor layer comprising indium and zinc, wherein the oxide semiconductor layer includes a channel formation region and a source region and a drain region with the channel formation region therebetween; a gate insulating layer over the oxide semiconductor layer; a gate electrode over the channel formation region with the gate insulating layer therebetween; a second insulating film comprising silicon oxide over the gate electrode; a third insulating film comprising aluminum oxide over the second insulating film; and a source electrode and a drain electrode electrically connected to the source region and the drain region through contact holes provided in the second insulating film and the third insulating film, respectively, wherein at least a portion of the oxide semiconductor layer comprises a crystalline region where a c-axis is aligned approximately in parallel with a normal vector of a surface of the portion of the oxide semiconductor layer and a portion of the oxide semiconductor layer is amorphous, wherein an amount of oxygen released from the first insulating film is greater than or equal to 3.0×
1020 atoms/cm3 in thermal desorption spectroscopy when the amount of oxygen is converted into oxygen atoms, andwherein the source region and the drain region are selectively doped with at least one element selected from rare gases and hydrogen. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a first insulating film comprising oxygen, wherein an amount of oxygen released from the first insulating film is greater than or equal to 3.0×
1020 atoms/cm3 in thermal desorption spectroscopy when the amount of oxygen is converted into oxygen atoms;forming an oxide semiconductor layer over and in contact with the first insulating film, the oxide semiconductor layer comprising indium, zinc and gallium, wherein the oxide semiconductor layer includes a channel formation region and a source region and a drain region with the channel formation region therebetween; forming a gate insulating layer over the oxide semiconductor layer; forming a gate electrode over the oxide semiconductor layer with the gate insulating layer therebetween; forming a second insulating film comprising silicon oxide over the gate electrode; forming a third insulating film comprising aluminum oxide over the second insulating film; forming contact holes in which part of the source region and part of the drain region are exposed, respectively; and forming a source electrode and a drain electrode on the third insulating film, the source electrode and the drain electrode electrically connected to the part of the source region and the part of the drain region through the contact holes, wherein the second insulating film is formed by CVD with a substrate temperature higher than or equal to 300°
C. and lower than or equal to 550°
C.,wherein at least a portion of the oxide semiconductor layer comprises a crystalline region where a c-axis is aligned approximately in parallel with a normal vector of a surface of the portion of the oxide semiconductor layer and a portion of the oxide semiconductor layer is amorphous, and wherein the source region and the drain region are selectively doped with at least one element selected from rare gases and hydrogen. - View Dependent Claims (8, 9, 10)
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11. A semiconductor device comprising:
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a first insulating film comprising oxygen; an oxide semiconductor layer formed over and in contact with the first insulating film, the oxide semiconductor layer comprising indium, wherein the oxide semiconductor layer includes a channel formation region and a source region and a drain region with the channel formation region therebetween; a gate insulating layer over the oxide semiconductor layer; a gate electrode over the channel formation region with the gate insulating layer therebetween; a second insulating film comprising silicon oxide over the gate electrode; a third insulating film comprising aluminum oxide over the second insulating film; and a source electrode and a drain electrode electrically connected to the source region and the drain region through contact holes provided in the second insulating film and the third insulating film, respectively, wherein the first insulating film comprises oxygen and is capable of supplying oxygen to the oxide semiconductor layer, wherein an amount of oxygen released from the first insulating film is greater than or equal to 3.0×
1020 atoms/cm3 in thermal desorption spectroscopy when the amount of oxygen is converted into oxygen atoms,wherein at least a portion of the oxide semiconductor layer comprises a crystalline region where a c-axis is aligned approximately in parallel with a normal vector of a surface of the portion of the oxide semiconductor layer and a portion of the oxide semiconductor layer is amorphous, and wherein the source region and the drain region are selectively doped with at least one element selected from rare gases and hydrogen. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A semiconductor device comprising:
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a first insulating film comprising oxygen; an oxide semiconductor layer formed over and in contact with the first insulating film, the oxide semiconductor layer comprising indium, wherein the oxide semiconductor layer includes a channel formation region and a source region and a drain region with the channel formation region therebetween; a gate insulating layer over the oxide semiconductor layer; a gate electrode over the channel formation region with the gate insulating layer therebetween; a second insulating film comprising silicon oxide over the gate electrode; a third insulating film comprising aluminum oxide over the second insulating film; and a source electrode and a drain electrode electrically connected to the source region and the drain region through contact holes provided in the second insulating film and the third insulating film, respectively, wherein a concentration of rare gas in the source region and the drain region is higher than a concentration of rare gas in the channel formation region, wherein the concentration of rare gas included in the source region and the drain region is higher than or equal to 5×
1019 atoms/cm3 and lower than or equal to 1×
1022 atoms/cm3, andwherein at least a portion of the oxide semiconductor layer comprises a crystalline region where a c-axis is aligned approximately in parallel with a normal vector of a surface of the portion of the oxide semiconductor layer and a portion of the oxide semiconductor layer is amorphous. - View Dependent Claims (18, 19, 20)
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Specification