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Semiconductor device

  • US 10,714,626 B2
  • Filed: 12/07/2017
  • Issued: 07/14/2020
  • Est. Priority Date: 04/02/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first gate electrode;

    a first gate insulating film over the first gate electrode;

    a first metal oxide film over and in contact with the first gate insulating film;

    an oxide semiconductor film over and in contact with the first metal oxide film;

    a source electrode and a drain electrode in contact with the oxide semiconductor film;

    a second gate insulating film over the source electrode and the drain electrode; and

    a second gate electrode over the second gate insulating film,wherein the first metal oxide film comprises one or more constituent metal elements of the oxide semiconductor film, andwherein a side surface of each of the first metal oxide film and the oxide semiconductor film is tapered and in contact with the source electrode or the drain electrode.

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