Light-emitting device and manufacturing method thereof

• US 10,714,657 B2
• Filed: 08/01/2018
• Issued: 07/14/2020
• Est. Priority Date: 04/20/2015
• Status: Active Grant

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: Epistar Corporation (Ennostar, Inc.)
• Inventors: Chao, Yen-Tai, Hsu, Sen-Jung, Chang, Tao-Chi, Wen, Wei-Chih, Chen, Ou, Wang, Yu-Shou, Tu, Chun-Hsiang, Huang, Jing-Feng
• Primary Examiner(s): Tran, Dzung
• Application Number:
  US16/051,842
• Publication Number:
  US 20180374990A1
• Time in Patent Office: 713 Days
• Field of Search: 257 98
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/16 with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

A light-emitting device includes a substrate having a top surface, wherein the top surface includes a first portion and a second portion; a first semiconductor stack including a first upper surface and a first side wall, wherein the first semiconductor stack is on the first portion; a second semiconductor stack including a second upper surface and a second side wall, wherein the second semiconductor stack is on the first upper surface, and wherein the second side wall is devoid of connecting the first side wall; a plurality of first concavo-convex structures on the first portion; and a plurality of second concavo-convex structures on the second portion; wherein the first side wall and the second portion of the top surface form an acute angle α between thereof; and wherein the second concavo-convex structures have smaller size than that of the first concavo-convex structures.

Claims

1. A light-emitting device, comprising:

a substrate having a top surface, wherein the top surface comprises a first portion and a second portion;

a first semiconductor stack comprising a first upper surface and a first side wall, wherein the first semiconductor stack is on the first portion;

a second semiconductor stack comprising a second upper surface and a second side wall, wherein the second semiconductor stack is on the first upper surface, and wherein the second side wall is devoid of connecting the first side wall;

a plurality of first concavo-convex structures on the first portion; and

a plurality of second concavo-convex structures on the second portion and not covered by the first semiconductor stack;

wherein the first side wall and the second portion of the top surface form an acute angle α

between thereof; and

wherein the second concavo-convex structures have smaller size than that of the first concavo-convex structures.

2. The light-emitting device according to claim 1, wherein the first upper surface comprises an exposing portion between the first side wall and the second side wall, and the second side wall and the exposing portion of the first upper surface form an obtuse angle β

between thereof.

3. The light-emitting device according to claim 2, wherein 100°

≤

β

=170°

.

4. The light-emitting device according to claim 1, wherein 30°

≤

α

≤

80°

.

5. The light-emitting device according to claim 1, wherein the second portion surrounds the first portion in a top view.

6. The light-emitting device according to claim 1, further comprising a buffer layer between the first semiconductor stack and the top surface.

7. The light-emitting device according to claim 6, wherein the buffer layer comprises AlN.

8. The light-emitting device according to claim 1, wherein one of the second concavo-convex structures has a height smaller than that of one of the first concavo-convex structures.

9. The light-emitting device according to claim 1, further comprising a first electrode on the first upper surface.

10. The light-emitting device according to claim 1, wherein the top surface further comprises an edge, and the second portion surrounds the first portion and is between the edge and the first portion, and the narrowest distance between the first portion and the edge is between about 1 μ

m and about 25 μ

m.

11. The light-emitting device according to claim 1, wherein the substrate comprises a side surface perpendicular to the top surface and an inclined surface formed between the top surface and the side surface.

12. The light-emitting device according to claim 11, wherein an angle between the top surface and the inclined surface or an angle between the inclined surface and the side surface is larger than 90 degrees.

13. The light-emitting device according to claim 11, wherein a shortest distance, between the top surface and a border between the inclined surface and the side surface, is between about 0.1 μ

m and 20 μ

m.

14. The light-emitting device according to claim 11, wherein the inclined surface is rougher than the side surface.

15. The light-emitting device according to claim 1, wherein the first side wall is rougher than the second side wall.

16. The light-emitting device according to claim 1, wherein the second semiconductor stack comprises a first semiconductor layer, an active layer on the first semiconductor layer and a second semiconductor layer on the active layer.

17. The light-emitting device according to claim 16, further comprising a dislocation stop layer between the substrate and the active layer.

18. The light-emitting device according to claim 17, wherein an Al concentration of the dislocation stop layer is higher than 10 times an Al concentration of the first semiconductor layer or that of the first semiconductor stack.

19. The light-emitting device according to claim 17, wherein the dislocation layer comprises Alx1Ga1-x1N, and wherein 0.05<

x1<

0.1.

20. The light-emitting device according to claim 1, wherein a ration of an area of the second portion to an area of the top surface is between about 0.02 and about 0.35.