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Radio frequency switch

  • US 10,715,133 B1
  • Filed: 05/30/2019
  • Issued: 07/14/2020
  • Est. Priority Date: 05/30/2019
  • Status: Active Grant
First Claim
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1. A radio frequency switch comprising a first port, a second port, and an N number of switch cells coupled in series between the first port and the second port, wherein N is a counting number greater than 1 and each of the N number of switch cells comprises:

  • a field-effect transistor (FET) comprising a source, a drain, a gate, and a body, wherein the source of switch cell 1 is coupled to the first port, the drain of switch cell N is coupled to the second port, and the drain of switch cell X is coupled to the source of switch cell X+1 for switch cell 1 through switch cell N, wherein X is a counting number;

    a first diode stack having a first anode coupled to the body of switch cell X and a first cathode coupled to the drain of switch cell X+1 for switch cell 1 through switch cell N−

    1; and

    a second diode stack having a second anode coupled to the body of switch cell X and a second cathode coupled to the source of switch cell X−

    1 for switch cell 2 through switch cell N.

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