Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus, recording medium, and cleaning completion determining method

• US 10,724,137 B2
• Filed: 01/28/2014
• Issued: 07/28/2020
• Est. Priority Date: 02/05/2013
• Status: Active Grant

• Current Assignee: Kokusai Electric Corp.
• Original Assignee: Kokusai Electric Corp.
• Inventors: Morita, Osamu, Mori, Shinichiro, Kameda, Kenji
• Primary Examiner(s): Lund, Jeffrie R
• Assistant Examiner(s): Antolin, Stanislav
• Application Number:
  US14/765,774
• Publication Number:
  US 20150368794A1
• Time in Patent Office: 2,373 Days
• CPC Class Codes: C23C 16/22 characterised by the deposition of inorganic material, other than metallic material
• CPC Class Codes: C23C 16/24 Deposition of silicon only
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23C 16/4408 by purging residual gases from the reaction chamber or gas lines
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: H01J 2237/022 Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
• CPC Class Codes: H01J 2237/0225 Detecting or monitoring foreign particles
• CPC Class Codes: H01J 37/32862 In situ cleaning of vessels and/or internal parts
• CPC Class Codes: H01J 37/32981 Gas analysis
• CPC Class Codes: H01L 21/02043 Cleaning before device manufacture, i.e. Begin-Of-Line process
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32

Abstract

According to one aspect of the present disclosure, there is provided a cleaning method including: cleaning a component in which a deposit adhering to the component constituting an apparatus is removed by supplying and discharging a cleaning gas, wherein the act of cleaning includes controlling the apparatus so that a signal, which indicates a concentration of a predetermined gas generated by a reaction of the deposit and the cleaning gas, reaches a predetermined upper limit value or less and then stays within a range between the predetermined upper limit value and a predetermined lower limit value for a predetermined time period.

Claims

1. A substrate processing apparatus that processes a substrate provided into a process chamber by supplying a process gas, the substrate processing apparatus comprising:

a cleaning gas supply that supplies a cleaning gas;

a discharge port that discharges the process gas or the cleaning gas;

a controller that controls the cleaning gas supply and the discharge port so as to remove a deposit adhering to a component constituting the apparatus by discharging a predetermined gas generated by a reaction of the deposit and the cleaning gas; and

a concentration detector, communicatively coupled to the controller, that measures a concentration of the predetermined gas in a discharge path connected to the process chamber,

wherein the controller includes a memory that stores a recipe including a cleaning step of executing a cleaning process and a sub-recipe for removing the deposit adhering to the component constituting the apparatus, and

wherein the controller is configured to;

read the recipe and the sub-recipe from the memory;

control the cleaning gas supply and the discharge port by executing the cleaning step of the recipe and executing the sub-recipe a multiple number of times in the cleaning step, the sub-recipe being executed by performing a cycle the multiple number of times, and the cycle including performing, in a time series manner;

a gas cleaning process of supplying the cleaning gas by the cleaning gas supply; and

an exhaust process of discharging the cleaning gas by the discharge port;

monitor, after executing the sub-recipe a predetermined number of times, a signal from the concentration detector while subsequently executing the sub-recipe;

determine, based on the signal, that the concentration of the predetermined gas reaches a predetermined upper limit value or less;

determine, based on the signal and the multiple number of times that the cycle is performed, an execution end point of the sub-recipe such that after the concentration of the predetermined gas reaches the upper limit value or less, the concentration of the predetermined gas stays within a range between the predetermined upper limit value and a predetermined lower limit value for a predetermined time period while executing the sub-recipe;

terminate the sub-recipe by terminating the controlling of the cleaning gas supply and the discharge port at the execution end point to return to the recipe; and

execute one or more remaining steps in the recipe after the cleaning step and terminate the recipe.

2. The substrate processing apparatus of claim 1, wherein the concentration detector is installed in the discharge path at a downstream side of a pump installed in the discharge path.

3. The substrate processing apparatus of claim 1, wherein the concentration detector includes:

a collecting part configured to collect at least a part of a gas discharged from the process chamber; and

an extracting part configured to extract the predetermined gas contained in the at least a part of the gas collected by the collecting part.

4. The substrate processing apparatus of claim 1, wherein the concentration detector includes a plurality of measuring portions installed in the discharge path.

5. The substrate processing apparatus of claim 1, wherein the sub-recipe is executed a number of times that ranges from a first predetermined number to a second predetermined number greater than the first predetermined number.

6. The substrate processing apparatus of claim 5, wherein the first predetermined number is a number of times the sub-recipe has been executed when the controller determines that the signal indicating the concentration of the predetermined gas reaches the predetermined upper limit value for a first time, and

wherein the first predetermined number is a numerical value obtained by dividing a current cumulative film thickness value by a film thickness value which indicates an amount of a film that is being removed when the sub-recipe is executed once.

7. The substrate processing apparatus of claim 5, wherein if a number of times the sub-recipe including the gas cleaning process is executed exceeds the second predetermined number, an alarm indicating an end point detection incapability is notified.

8. The substrate processing apparatus of claim 5, wherein the recipe for removing the deposit is terminated if a number of times the recipe is executed while the controller determines that the signal indicating the concentration of the predetermined gas stays within the range between the predetermined upper and lower limit values for the predetermined time period is equal to or less than the second predetermined number.

9. The substrate processing apparatus of claim 5, wherein a maximum value and a minimum value of the signal acquired during the execution of the recipe are monitored, and if a number of times which the maximum value and the minimum value of the signal consecutively are maintained within the range between the predetermined upper and lower limit values reaches a third predetermined number between the first predetermined number and the second predetermined number, the controller determines cleaning completion as normal.

10. The substrate processing apparatus of claim 1, wherein the predetermined gas is at least one selected from a group consisting of silicon tetrafluoride (SiF4), silicon tetrachloride (SiCl4), nitrogen trifluoride (NF3), titanium tetrachloride (TiCl4), titanium tetrafluoride (TiF4), tungsten tetrafluoride (WF4), tungsten hexafluoride (WF6), aluminum tetrafluoride (AlF4), hafnium tetrachloride (HfCl4), hafnium tetrafluoride (HfF4) and a byproduct thereof.

11. The substrate processing apparatus of claim 1, wherein the predetermined number of times is a numerical value obtained by dividing a current cumulative film thickness value by a film thickness value which indicates an amount of a film that is being removed when the sub-recipe is executed once.

12. The substrate processing apparatus of claim 1, wherein the sub-recipe is executed the predetermined number of times that ranges from a first predetermined number to a second predetermined number.

13. The substrate processing apparatus of claim 12, wherein after the sub-recipe is executed the predetermined number of times, a maximum value and a minimum value of the signal acquired during the execution of the sub-recipe are monitored, and if the number of times the maximum value and the minimum value of the signal consecutively are maintained within the range between the predetermined upper and lower limit values reaches a third predetermined number between the first predetermined number and the second predetermined number, cleaning completion is determined as normal.

14. The substrate processing apparatus of claim 12, wherein if the number of times the sub-recipe is executed exceeds the second predetermined number, cleaning completion is determined as abnormal and an alarm indicating an end point detection incapability is notified.

15. The substrate processing apparatus of claim 14, wherein after the cleaning completion determination, a next step of the recipe for removing the deposit is executed and the recipe for removing the deposit is terminated.

16. The substrate processing apparatus of claim 1, wherein after the sub-recipe is executed the predetermined number of times, whether a maximum value and a minimum value of the signal acquired during the execution of the sub-recipe are maintained within the range between the predetermined upper and lower limit values is confirmed.