Increased terrace configuration for non-volatile memory
First Claim
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1. An apparatus comprising:
- a stack comprising a plurality of control gate layers;
a first set of memory cells configured to be biased by the stack of control gate layers;
a second set of memory cells configured to be biased by the stack of control gate layers;
a first track region separating the first set of memory cells from the second set of memory cells;
a first set of tracks extending in the first track region and configured to bias a first set of control gate layers of the stack of control gate layers; and
a second set of tracks extending in a second track region separate from the first track region and configured to bias a second set of control gate layers of the stack of the control gate layers.
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Abstract
A three-dimensional block includes a stack comprising a plurality of control gate layers configured to bias memory cells of the block. The block includes a plurality of track regions that includes three or more hookup regions. The plurality of track regions separate the memory cells into three memory cell regions. Tracks extending in the track regions supply voltages to the hookup regions. A system includes a memory plane of blocks, and a plurality of track regions, each extending across the memory plane of blocks.
20 Citations
17 Claims
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1. An apparatus comprising:
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a stack comprising a plurality of control gate layers; a first set of memory cells configured to be biased by the stack of control gate layers; a second set of memory cells configured to be biased by the stack of control gate layers; a first track region separating the first set of memory cells from the second set of memory cells; a first set of tracks extending in the first track region and configured to bias a first set of control gate layers of the stack of control gate layers; and a second set of tracks extending in a second track region separate from the first track region and configured to bias a second set of control gate layers of the stack of the control gate layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 9, 10, 11, 12, 13, 14, 15)
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8. An apparatus comprising:
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a stack comprising a plurality of control gate layers configured to bias a plurality of memory cells; and a row decoder configured to; output a first set of voltages to a first set of the control gate layers of the stack by way of a first set of tracks extending through a first track region; and output a second set of voltages to a second set of control gate layers of the stack by way of a second set of tracks extending through a second track region separate from the first track region. - View Dependent Claims (16)
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17. A method comprising:
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outputting, with a first row decoder portion, a first control gate voltage associated with a first memory operation; supplying, with a first track coupled to the first row decoder portion, the first control gate voltage through a first track region to a first control gate layer of a stack; outputting, with a second row decoder portion, a second control gate voltage associated with a second memory operation; and supplying, with a second track coupled to the second row decoder, the second control gate voltage through a second track region to a second control gate layer of the stack, wherein the first track region is separate from the second track region.
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Specification