Method of manufacturing at least one field effect transistor having epitaxially grown electrodes
First Claim
1. A method of manufacturing at least one field effect transistor, comprising:
- a step of supplying a substrate surmounted by first, second, and third structures, the second structure being arranged between the first and the third structures, the second structure comprising at least one first nano-object located away from the substrate, a part of the first nano-object of the second structure being configured to form a channel area of the transistor, the first nano-object comprising first and second opposite ends along a reference axis passing through the first and the second ends; and
a step of forming electrodes of the transistor comprising;
a step of epitaxial growth of a first material which results in obtaining a first continuity of matter made of the first material connecting, along the reference axis, the first end of the first nano-object of the second structure to the first structure, and obtaining a second continuity of matter made of the first material connecting, along the reference axis, the second end of the first nano-object of the second structure to the third structure,wherein the first and the second continuities of matter serve to anchor the second structure to the first and the third structures, anda step of epitaxial growth of a second material, starting from the first material of the first and the second continuities of matter, the second material having a lattice parameter that is different from a lattice parameter of the first material of the first and the second continuities of matter which results in the second material being stressed,wherein the step of epitaxial growth of the second material induces a mechanical stress within the at least one first nano-object of the second structure.
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Abstract
A method of manufacturing a field effect transistor is provided, including supplying a substrate surmounted by first, second, and third structures, the second structure arranged between the first and the third structures and including at least one first nano-object located away from the substrate, a part of the first nano-object being configured to form a channel area of the transistor; forming electrodes of the transistor including epitaxial growth of a first material to obtain a first continuity of matter made of the first material between the second structure and the first structure, and to obtain a second continuity of matter made of the first material between the second structure and the third structure; and epitaxial growth of a second material, starting from the first material, the second material having a lattice parameter different from a lattice parameter of the first material of the first and the second continuities.
22 Citations
18 Claims
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1. A method of manufacturing at least one field effect transistor, comprising:
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a step of supplying a substrate surmounted by first, second, and third structures, the second structure being arranged between the first and the third structures, the second structure comprising at least one first nano-object located away from the substrate, a part of the first nano-object of the second structure being configured to form a channel area of the transistor, the first nano-object comprising first and second opposite ends along a reference axis passing through the first and the second ends; and a step of forming electrodes of the transistor comprising; a step of epitaxial growth of a first material which results in obtaining a first continuity of matter made of the first material connecting, along the reference axis, the first end of the first nano-object of the second structure to the first structure, and obtaining a second continuity of matter made of the first material connecting, along the reference axis, the second end of the first nano-object of the second structure to the third structure, wherein the first and the second continuities of matter serve to anchor the second structure to the first and the third structures, and a step of epitaxial growth of a second material, starting from the first material of the first and the second continuities of matter, the second material having a lattice parameter that is different from a lattice parameter of the first material of the first and the second continuities of matter which results in the second material being stressed, wherein the step of epitaxial growth of the second material induces a mechanical stress within the at least one first nano-object of the second structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification