Semiconductor device and manufacturing method of the same
First Claim
1. A semiconductor device comprising:
- a first insulator over a substrate;
a second insulator over the first insulator;
a semiconductor over the second insulator, the semiconductor including a first region, a second region, and a third region, wherein the first region is located between the second region and the third region;
a source electrode and a drain electrode over the second region and the third region of the semiconductor, respectively;
a third insulator over and in contact with the first region of the semiconductor;
a fourth insulator over the source electrode and the drain electrode;
a first gate insulator including a first region over a top surface of the third insulator and a second region over and in contact with a side surface of the fourth insulator; and
a first gate electrode over the first gate insulator,wherein an entirety of the third insulator is directly underneath the first gate electrode,wherein the first insulator has a first region in contact with the second insulator and a second region in contact with one of the source electrode and the drain electrode, andwherein a thickness of the first region of the first insulator is larger than a thickness of the second region of the first insulator.
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Accused Products
Abstract
A semiconductor device includes first and second insulators over a substrate, a semiconductor over the second insulator, first and second conductors over the semiconductor, a third insulator over the semiconductor, a fourth insulator over the third insulator, a third conductor over the fourth insulator, and a fifth insulator over the first insulator, the first conductor and the second conductor. The semiconductor includes first, second, and third regions. The first region overlaps with the third conductor with the third insulator and the fourth insulator positioned therebetween. The second region overlaps with the third conductor with the first conductor, the fourth insulator, and the fifth insulator positioned therebetween. The third region overlaps with the third conductor with the second conductor, the fourth insulator, and the fifth insulator positioned therebetween. The fourth insulator is in contact with a side surface of the fifth insulator in a region overlapping with the semiconductor.
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Citations
9 Claims
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1. A semiconductor device comprising:
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a first insulator over a substrate; a second insulator over the first insulator; a semiconductor over the second insulator, the semiconductor including a first region, a second region, and a third region, wherein the first region is located between the second region and the third region; a source electrode and a drain electrode over the second region and the third region of the semiconductor, respectively; a third insulator over and in contact with the first region of the semiconductor; a fourth insulator over the source electrode and the drain electrode; a first gate insulator including a first region over a top surface of the third insulator and a second region over and in contact with a side surface of the fourth insulator; and a first gate electrode over the first gate insulator, wherein an entirety of the third insulator is directly underneath the first gate electrode, wherein the first insulator has a first region in contact with the second insulator and a second region in contact with one of the source electrode and the drain electrode, and wherein a thickness of the first region of the first insulator is larger than a thickness of the second region of the first insulator. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification