×

Semiconductor device and manufacturing method of the same

  • US 10,727,355 B2
  • Filed: 03/03/2016
  • Issued: 07/28/2020
  • Est. Priority Date: 03/06/2015
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device comprising:

  • a first insulator over a substrate;

    a second insulator over the first insulator;

    a semiconductor over the second insulator, the semiconductor including a first region, a second region, and a third region, wherein the first region is located between the second region and the third region;

    a source electrode and a drain electrode over the second region and the third region of the semiconductor, respectively;

    a third insulator over and in contact with the first region of the semiconductor;

    a fourth insulator over the source electrode and the drain electrode;

    a first gate insulator including a first region over a top surface of the third insulator and a second region over and in contact with a side surface of the fourth insulator; and

    a first gate electrode over the first gate insulator,wherein an entirety of the third insulator is directly underneath the first gate electrode,wherein the first insulator has a first region in contact with the second insulator and a second region in contact with one of the source electrode and the drain electrode, andwherein a thickness of the first region of the first insulator is larger than a thickness of the second region of the first insulator.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×