Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus
First Claim
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1. A method of forming a transition metal containing film on a substrate by a cyclical deposition process, the method comprising:
- contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand, wherein the a bidentate nitrogen containing adduct ligand coordinates to a transition metal atom of the transition metal halide compound, and wherein a halogen atom is bonded to the metal atom; and
contacting the substrate with a second vapor phase reactant.
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Abstract
A method of forming a transition metal containing films on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand; and contacting the substrate with a second vapor phase reactant. A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing ligand to a reaction chamber is disclosed, along with related vapor deposition apparatus.
3598 Citations
24 Claims
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1. A method of forming a transition metal containing film on a substrate by a cyclical deposition process, the method comprising:
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contacting the substrate with a first vapor phase reactant comprising a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand, wherein the a bidentate nitrogen containing adduct ligand coordinates to a transition metal atom of the transition metal halide compound, and wherein a halogen atom is bonded to the metal atom; and contacting the substrate with a second vapor phase reactant. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of forming a transition metal containing film on a substrate by a cyclical deposition process, the method comprising:
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contacting the substrate with a first vapor phase reactant comprising a transition metal compound comprising an adduct forming ligand that coordinates to a transition metal of the transition metal compound and a halide bonded to the transition metal; and contacting the substrate with a second vapor phase reactant; wherein the transition metal is selected group consisting of copper (Cu), nickel (Ni), and cobalt (Co). - View Dependent Claims (17, 18, 19, 20, 21, 22)
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23. A method for supplying a transition metal halide compound comprising a bidentate nitrogen containing adduct ligand to a reaction chamber, the method comprising:
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providing a precursor source vessel configured for containing the transition metal halide compound, wherein the transition metal halide compound comprises a halide atom bonded to a transition metal atom; fluidly connecting the precursor source vessel to the reaction chamber; heating the transition metal halide compound contained in the precursor source vessel to a temperature greater than 50°
C.;generating a vapor pressure of the transition metal halide compound of least at least 0.001 mbar; and supplying the transition metal halide compound to the reaction chamber. - View Dependent Claims (24)
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Specification