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Gallium nitride substrate and manufacturing method of nitride semiconductor crystal

  • US 10,734,485 B2
  • Filed: 03/29/2017
  • Issued: 08/04/2020
  • Est. Priority Date: 12/17/2012
  • Status: Active Grant
First Claim
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1. A gallium nitride substrate comprising a first main surface and a second main surface opposite thereto, the first main surface having a normal vector of which angle to the <

  • 10-10>

    direction is from 0 to 10°

    , wherein;

    the substrate comprises GaN crystal grown by HVPE method,the substrate has an n-type carrier density of 3×

    1018 cm

    3
    or more, anda stacking fault density in the first main surface is 50 cm

    1
    or less as evaluated by a low temperature cathode luminescence method.

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