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Methods for forming a semiconductor device structure and related semiconductor device structures

  • US 10,734,497 B2
  • Filed: 07/17/2018
  • Issued: 08/04/2020
  • Est. Priority Date: 07/18/2017
  • Status: Active Grant
First Claim
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1. A method for forming a semiconductor device structure, the method comprising:

  • forming a molybdenum nitride film on a substrate by atomic layer deposition, wherein forming the molybdenum nitride film comprises;

    contacting the substrate with a first vapor phase reactant comprising a binary molybdenum halide precursor;

    after contacting the substrate with the first vapor phase reactant, contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor selected from the group comprising ammonia (NH3), hydrazine (N2H4), triazane (N3H5), tertbutylhydrazine (C4H9N2H3), methylhydrazine (CH3NHNH2), and dimethylhydrazine ((CH3)2N2H2); and

    at the same time as or after contacting the substrate with the second vapor phase reactant, contacting the substrate with a third vapor phase reactant comprising a reducing precursor selected from the group comprising hydrogen gas (H2), silane (SiH4), disilane (Si2H6), trisilane (Si3H8), tetrasilane (Si4H8), and acetylene (C2H2); and

    forming a gate electrode structure comprising the molybdenum nitride film, the gate electrode structure having an effective work function greater than approximately 5.0 eV.

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