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Semiconductor device

  • US 10,734,550 B2
  • Filed: 08/24/2018
  • Issued: 08/04/2020
  • Est. Priority Date: 08/25/2017
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first semiconductor layer and the second semiconductor layer;

    a first electrode disposed on the first semiconductor layer;

    a second electrode disposed on the second semiconductor layer;

    a first cover electrode disposed on the first electrode; and

    a second cover electrode disposed on the second electrode,wherein;

    the second cover electrode includes a plurality of pads, and connecting portions configured to connect the plurality of pads, anda width of each of the connecting portions is smallest at a central position between the adjacent pads,wherein the first electrode includes a first groove provided on an upper surface of the first electrode, and a protrusion configured to surround the first groove, andwherein the first cover electrode is provided on the first groove and the protrusion.

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