Semiconductor device
First Claim
1. A semiconductor device comprising:
- a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first semiconductor layer and the second semiconductor layer;
a first electrode disposed on the first semiconductor layer;
a second electrode disposed on the second semiconductor layer;
a first cover electrode disposed on the first electrode; and
a second cover electrode disposed on the second electrode,wherein;
the second cover electrode includes a plurality of pads, and connecting portions configured to connect the plurality of pads, anda width of each of the connecting portions is smallest at a central position between the adjacent pads,wherein the first electrode includes a first groove provided on an upper surface of the first electrode, and a protrusion configured to surround the first groove, andwherein the first cover electrode is provided on the first groove and the protrusion.
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Accused Products
Abstract
Disclosed herein is a semiconductor device including: a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first insulating layer disposed on the semiconductor structure; a first electrode disposed on the first conductive semiconductor layer through a first hole of the first insulating layer; a second electrode disposed on the second conductive semiconductor layer through a second hole of the first insulating layer; a first cover electrode disposed on the first electrode; and a second cover electrode disposed on the second electrode, wherein the second cover electrode includes a plurality of pads, and a connecting portion configured to connect the plurality of pads, a width of the connecting portion is smallest at a central position between the adjacent pads, and an area ratio between the second cover electrode and the first cover electrode is in the range of 1:1.1 to 1:1.5.
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Citations
15 Claims
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1. A semiconductor device comprising:
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a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer interposed between the first semiconductor layer and the second semiconductor layer; a first electrode disposed on the first semiconductor layer; a second electrode disposed on the second semiconductor layer; a first cover electrode disposed on the first electrode; and a second cover electrode disposed on the second electrode, wherein; the second cover electrode includes a plurality of pads, and connecting portions configured to connect the plurality of pads, and a width of each of the connecting portions is smallest at a central position between the adjacent pads, wherein the first electrode includes a first groove provided on an upper surface of the first electrode, and a protrusion configured to surround the first groove, and wherein the first cover electrode is provided on the first groove and the protrusion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification