Light emitting diode

• US 10,734,551 B2
• Filed: 10/21/2019
• Issued: 08/04/2020
• Est. Priority Date: 02/17/2015
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Genesis Photonics Inc.
• Inventors: Huang, Yi-Ru, Chuang, Tung-Lin, Lan, Yan-Ting, Hsu, Sheng-Tsung, Shen, Chih-Ming, Huang, Jing-En, Lai, Teng-Hsien, Mai, Hung-Chuan, Huang, Kuan-Chieh, Ting, Shao-Ying, Chen, Cheng-Pin, Chien, Wei-Chen, Cheng, Chih-Chin, Tseng, Chih-Hung
• Primary Examiner(s): Tran, Minh Loan
• Application Number:
  US16/659,548
• Publication Number:
  US 20200052159A1
• Time in Patent Office: 288 Days
• Field of Search: None
• CPC Class Codes: H01L 33/36 characterised by the electrodes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/465 with a resonant cavity structure
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.

Claims

1. A light emitting diode, comprising:

a semiconductor structure comprising a first-type semiconductor layer, a second-type semiconductor layer and a light emitting layer disposed between the first-type semiconductor layer and the second-type semiconductor layer;

an insulating structure disposed over the semiconductor structure, the insulation layer comprising a first insulating layer, a second insulating layer and a distributed Bragg reflector (DBR) layer sandwiched by the first insulating layer and the second insulating layer;

a first patterned metal layer disposed between the insulating structure and the first-type semiconductor layer and electrically connected to the first-type semiconductor layer, wherein the first patterned metal layer comprises at least one first welding portion;

a second patterned metal layer disposed between the insulating structure and the second-type semiconductor layer, wherein the second patterned metal layer comprises at least one second welding portion;

a current dispersion layer formed over the second-type semiconductor layer and disposed between the second patterned metal layer and the semiconductor structure, wherein the second patterned metal layer is electrically connected to the first-type semiconductor layer through the current dispersion layer; and

a first electrode layer and a second electrode layer apart disposed on the insulating structure,

wherein the insulating structure has at least one first through hole exposing a portion of the welding portion of the first patterned metal layer and has at least one second through hole exposing a portion of the welding portion of the second patterned metal layer, wherein the first electrode layer and a second electrode layer are electrically connected to the first patterned metal layer and the second patterned metal layer through the first through hole and the second through hole, respectively,

wherein the DBR layer of the insulating structure is not overlapped with the first welding portion of the first patterned metal layer and the second welding portion of the second patterned metal layer, respectively.

2. The light emitting diode as recited in claim 1, further comprising at least one insulation pattern disposed between the current dispersion layer and the second-type semiconductor layer and in contact with the second-type semiconductor layer, wherein the welding portion of the second patterned metal layer is aligned with the insulation pattern and is located within an area of a footprint of the insulation pattern.

3. The light emitting diode as recited in claim 2, wherein each of the insulation patterns comprises a plurality of first sub-layers and a plurality of second sub-layers, and the first sub-layers and the second sub-layers are stacked alternately and a material of each of the first sub-layers is different from a material of each of the second sub-layers.

4. The light emitting diode as recited in claim 2, wherein each of the insulation patterns comprises a plurality of first sub-layers and a plurality of second sub-layers, and the first sub-layers and the second sub-layers are stacked alternately and a material of each of the first sub-layers is the same to a material of each of the second sub-layers, and a density of each of the first sub-layers is different from a density of each of the second sub-layers.

5. The light emitting diode as recited in claim 1, wherein a reflectance of the DBR layer is greater than or equal to 90% in a reflective wavelength range at least covering 0.8(X) nm to 1.8(X) nm, the light emitting layer is configured to emit a beam, the beam has a peak wavelength within an emission wavelength range, and X is the peak wavelength of the emission wavelength range.

6. The light emitting diode as recited in claim 1, wherein the distributed Bragg reflector (DBR) layer of the insulation structure is entirely enclosed by the first insulating layer and the second insulating layer.

7. The light emitting diode as recited in claim 1, wherein the first electrode layer is not overlapped with the second welding portion of the second patterned metal layer.

8. The light emitting diode as recited in claim 1, wherein the second electrode layer is not overlapped with the first welding portion of the first patterned metal layer.

9. A light emitting diode, comprising:

a semiconductor structure comprising a first-type semiconductor layer, a second-type semiconductor layer and a light emitting layer disposed between the first-type semiconductor layer and the second-type semiconductor layer;

an insulating structure disposed over the semiconductor structure, the insulation layer comprising a first insulating layer and a distributed Bragg reflector (DBR) layer attached to the first insulating layer;

a first patterned metal layer disposed between the insulating structure and the first-type semiconductor layer and electrically connected to the first-type semiconductor layer, wherein the first patterned metal layer comprises at least one first welding portion;

a second patterned metal layer disposed between the insulating structure and the second-type semiconductor layer, wherein the second patterned metal layer comprises at least one second welding portion;

a current dispersion layer formed over the second-type semiconductor layer and disposed between the second patterned metal layer and the semiconductor structure, wherein the second patterned metal layer is electrically connected to the first-type semiconductor layer through the current dispersion layer; and

a first electrode layer and a second electrode layer apart disposed on the insulating structure,

wherein the insulating structure has at least one first through hole exposing a portion of the welding portion of the first patterned metal layer and has at least one second through hole exposing a portion of the welding portion of the second patterned metal layer, wherein the first electrode layer and a second electrode layer are electrically connected to the first patterned metal layer and the second patterned metal layer through the first through hole and the second through hole, respectively,

wherein the DBR layer of the insulating structure is not overlapped with the first welding portion of the first patterned metal layer and the second welding portion of the second patterned metal layer, respectively.

10. The light emitting diode as recited in claim 9, further comprising at least one insulation pattern disposed between the current dispersion layer and the second-type semiconductor layer and in contact with the second-type semiconductor layer, wherein the welding portion of the second patterned metal layer is aligned with the insulation pattern and is located within an area of a footprint of the insulation pattern.

11. The light emitting diode as recited in claim 10, wherein each of the insulation patterns comprises a plurality of first sub-layers and a plurality of second sub-layers, and the first sub-layers and the second sub-layers are stacked alternately and a material of each of the first sub-layers is the same to a material of each of the second sub-layers, and a density of each of the first sub-layers is different from a density of each of the second sub-layers.

12. The light emitting diode as recited in claim 9, wherein a reflectance of the DBR layer is greater than or equal to 90% in a reflective wavelength range at least covering 0.8(X) nm to 1.8(X) nm, the light emitting layer is configured to emit a beam, the beam has a peak wavelength within an emission wavelength range, and X is the peak wavelength of the emission wavelength range.

13. The light emitting diode as recited in claim 9, wherein the first electrode layer is not overlapped with the second welding portion of the second patterned metal layer.

14. The light emitting diode as recited in claim 9, wherein the second electrode layer is not overlapped with the first welding portion of the first patterned metal layer.

15. A light emitting diode, comprising:

a semiconductor structure comprising a first-type semiconductor layer, a second-type semiconductor layer and a light emitting layer disposed between the first-type semiconductor layer and the second-type semiconductor layer, wherein the semiconductor structure has at least one groove to expose the first-type semiconductor layer;

an insulating structure disposed over the semiconductor structure;

a current dispersion layer disposed between the semiconductor structure and the insulating structure and formed over the second-type semiconductor layer; and

a first electrode layer and a second electrode layer apart disposed on the insulating structure, wherein the first electrode layer is electrically connected to the first-type semiconductor layer by penetrating through the groove, and the second electrode layer is electrically connected to the second-type semiconductor through the current dispersion layer,

wherein the first electrode layer and the second electrode layer are not overlapped with the at least one groove, respectively.

16. The light emitting diode as recited in claim 15, wherein, the first insulation structure comprising a distributed Bragg reflector (DBR) layer.

17. The light emitting diode as recited in claim 16, wherein the a first insulating layer further comprises a first insulating layer, a second insulating layer, the distributed Bragg reflector (DBR) layer is entirely enclosed by the first insulating layer and the second insulating layer.

18. The light emitting diode as recited in claim 15, wherein a reflectance of the DBR layer is greater than or equal to 90% in a reflective wavelength range at least covering 0.8(X) nm to 1.8(X) nm, the light emitting layer is configured to emit a beam, the beam has a peak wavelength within an emission wavelength range, and X is the peak wavelength of the emission wavelength range.

19. The light emitting diode as recited in claim 15, wherein a material of the eutectic layer comprises gold (Au), gold/tin (Au/Sn) alloy, or other conductive materials applicable in eutectic bonding.