Semiconductor light emitting device with light extraction structures
First Claim
1. A light emitting device comprising:
- a semiconductor structure comprising a light emitting layer between an n-type region and a p-type region, a plurality of cavities being formed in a surface of the semiconductor structure and extending at least into the p-type region, each of the plurality of cavities having a hexagon-shaped cross section and a reflective surface; and
a plurality of electrical contacts, a respective one of the plurality of electrical contacts electrically coupled between the p-type region and a respective one of the plurality of cavities.
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Abstract
A light emitting device is described. The light emitting device includes a substrate and a semiconductor structure. The semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region and has a first surface adjacent the substrate and a second surface opposite the first surface. The first surface of the semiconductor structure multiple cavities formed therein, which extend into at least one of the n-type region and the p-type region. The cavities are spaced apart and lined by a dielectric layer. At least a portion of the second surface is roughened to form multiple features spaced apart at a distance smaller than a distance between each of the cavities formed in the first surface to enhance extraction of light emitted from the light emitting layer. At least one contact is disposed between the first surface of the semiconductor structure and the substrate.
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Citations
20 Claims
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1. A light emitting device comprising:
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a semiconductor structure comprising a light emitting layer between an n-type region and a p-type region, a plurality of cavities being formed in a surface of the semiconductor structure and extending at least into the p-type region, each of the plurality of cavities having a hexagon-shaped cross section and a reflective surface; and a plurality of electrical contacts, a respective one of the plurality of electrical contacts electrically coupled between the p-type region and a respective one of the plurality of cavities. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of manufacturing a light emitting device, the method comprising:
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forming a p-type layer, a light emitting layer, and an n-type layer on a substrate; removing the substrate; etching a plurality of cavities having hexagon-shaped cross-sections into a surface of the semiconductor structure and extending at least into the p-type layer; and disposing a metal material in each of the plurality of cavities. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification