Method and apparatus for filling a gap

• US 10,741,385 B2
• Filed: 07/14/2017
• Issued: 08/11/2020
• Est. Priority Date: 07/28/2016
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: Pore, Viljami, Knaepen, Werner, Jongbloed, Bert, Pierreux, Dieter, Van Der Star, Gido, Suzuki, Toshiya
• Primary Examiner(s): Abdelaziez, Yasser A
• Application Number:
  US16/317,774
• Publication Number:
  US 20190295837A1
• Time in Patent Office: 1,124 Days
• CPC Class Codes: C23C 16/045 Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45527 characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: C23C 16/50 using electric discharges generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02219 the compound comprising silicon and nitrogen
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/76224 using trench refilling with dielectric materials trench filling with polycristalline silicon H01L21/763; together with vertical isolation, e.g. trench refilling in a SOI substrate H01L21/76264

Abstract

There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.

Claims

1. A method of filling one or more gaps created during manufacturing of a feature on a substrate by providing the substrate in a reaction chamber and providing a deposition method comprising:

introducing a first reactant to the substrate with a first dose on a first area of the surface of the one or more gaps;

introducing a second reactant to the substrate with a second dose on a second area of the surface of the one or more gaps,

wherein the first and the second areas overlap in an overlap area and leave an area where the first and the second areas do not overlap;

introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the area where the first and the second areas do not overlap; and

in between introducing the second and the third reactant, introducing the first reactant again to the substrate.

2. The method according to claim 1, wherein the method comprises removing excess reactant and byproduct after each step of introducing a first, second and/or third reactant.

3. The method according to claim 1, wherein the deposition method is repeated multiple times to fill the gap.

4. The method according to claim 1, wherein one of the first and the second reactants is introduced with a saturating dose and the other one of the first and second reactants is introduced with a subsaturating dose.

5. The method according to claim 4, wherein said one of the first and the second reactants is a potential growth reactant providing potential growth dependent on the other reactants.

6. The method according to claim 4, wherein the saturating dose is sufficiently large for said one of the first and second reactants to reach the bottom of the gap.

7. The method according to claim 4, wherein said one of the first and the second reactants is introduced to cover the total surface of the one or more gaps.

8. The method according to claim 5, wherein said other one of the first and second reactants comprise a low growth reactant providing a relatively low growth in combination with the potential growth reactant.

9. The method according to claim 4, wherein the subsaturating dose is sufficiently low for said other one of the first and second reactants to not reach the bottom of the gap.

10. The method according to claim 4, wherein said other one of the first and the second reactants is introduced to cover said corresponding one of the first and second areas which is smaller than the total surface of the one or more gaps.

11. The method according to claim 10, wherein the corresponding one of the first and second area is substantially the same as the overlapping area and covers substantially the top of the gap.

12. The method according to claim 1, wherein the third reactant comprises a high growth reactant providing a relatively high growth in combination with the potential growth reactant.

13. The method according to claim 12, wherein the third reactant is introduced with a saturating dose to ensure that the bottom of the gap is reached by the third reactant.

14. The method according to claim 5, wherein the potential growth reactant comprises silicon.

15. The method according to claim 14, wherein the potential growth reactant comprises silanediamine.

16. The method according to claim 15, wherein the silanediamine comprises N,N,N′

,N′

-tetraethyl silanediamine.

17. The method according to claim 8, wherein the low growth reactant comprises nitrogen.

18. The method according to claim 8, wherein the low growth reactant is activated by a plasma.

19. The method according to claim 1, wherein the third reactant comprises oxygen.

20. The method according to claim 1, wherein the third reactant is activated by a plasma.

21. The method according to claim 1, wherein the third reactant comprises ozone and/or hydrogen peroxide.

22. The method according to claim 5, wherein the potential growth reactant comprises an organometal.

23. The method according to claim 22, wherein the organometal comprises an organoaluminium.

24. The method according to claim 23, wherein the organoaluminium comprises a trim ethyl aluminium.

26. The method according to claim 1, wherein the third reactant comprises water, hydrogen peroxide or hydrazine.

25. A method of filling one or more gaps created during manufacturing of a feature on a substrate by providing the substrate in a reaction chamber and providing a deposition method comprising:

introducing a first reactant to the substrate with a first dose on a first area of the surface of the one or more gaps;

introducing a second reactant to the substrate with a second dose on a second area of the surface of the one or more gaps,

wherein the first and the second areas overlap in an overlap area and leave an area where the first and the second areas do not overlap; and

,

introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the area where the first and the second areas do not overlap,

wherein said one of the first and the second reactants is a potential growth reactant comprising a trimethylaluminium, providing potential growth dependent on the other reactants, and wherein the other of said one of the first and the second reactants is a low growth reactant comprising ozone.

27. The method of claim 25, wherein the third reactant comprises water.