Perforated plasma confinement ring in plasma reactors

• US 20010000104A1
• Filed: 11/30/2000
• Published: 04/05/2001
• Est. Priority Date: 12/28/1998
• Status: Active Grant

• Current Assignee: George Mueller, Lumin Li
• Original Assignee: George Mueller, Lumin Li
• Inventors: Mueller, George, Li, Lumin
• Granted Patent: US 6,506,685 B2
• Time in Patent Office: Days
• US Class Current: 216/67
• CPC Class Codes: H01J 37/32165 Plural frequencies
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means
• CPC Class Codes: Y10S 156/915 Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus

Abstract

The invention relates to a plasma processing reactor apparatus for semiconductor processing a substrate. The apparatus includes a chamber. The apparatus further includes a top electrode configured to be coupled to a first RF power source having a first RF frequency and a bottom electrode configured to be coupled to second RF power source having a second RF frequency that is lower than the first RF frequency. The apparatus additionally includes an insulating shroud that lines an interior of the chamber, the insulating shroud being configured to be electrically floating during the processing. The apparatus further includes a perforated plasma confinement ring disposed outside of an outer periphery of the bottom electrode, a top surface of the perforated plasma confinement ring being disposed below a top surface of the substrate and electrically grounded during the processing.

Claims

1. A method of processing a substrate with a plasma, comprising:

generating the plasma;

confining the plasma within a volume defined at least by an electrically insulated or electrically floating chamber wall and an electrically conductive perforated confinement ring that is electrically grounded; and

removing electrons from the plasma through the confinement ring to ground so as to increase ion energy during processing.

2. The method as recited in

claim 1

wherein the perforated confinement ring is disposed between the chamber wall and an electrode during processing.

3. The method as recited in

claim 1

wherein the perforated confinement ring surrounds the outer periphery of the electrode during processing.

4. The method as recited in

claim 1

wherein the perforated confinement ring is positioned relative to the substrate so as to prevent contamination of the substrate during processing.

5. The method as recited in

claim 1

wherein the perforated confinement ring is disposed in its entirety at or below a top surface of the substrate during processing.

6. The method as recited in

claim 1

wherein the chamber wall and the perforated confinement ring are formed from a material that is substantially resistant to etching by the confined plasma.

7. The method as recited in

claim 6

wherein the perforated confinement ring is formed from SiC.

8. The method as recited in

claim 1

wherein the electrically insulated chamber wall or the electrically floating chamber wall prevents the plasma from grounding therethrough.

9. The method as recited in

claim 1

wherein the chamber wall is an insulating shroud that lines a portion of a process chamber.

11. The method as recited in

claim 1

further comprising:

providing a plasma reactor that includes a process chamber, a bottom electrode coupled to a first RF power source and a top electrode coupled to a second RF power source.

12. The method as recited in

claim 11

wherein the plasma is generated by flowing a process gas into the process chamber, and powering the electrodes via their respective power sources.

13. The method as recited in

claim 12

wherein the frequency of the bottom electrode is lower than the frequency of the top electrode.

14. The method as recited in

claim 13

wherein the frequency of the top electrode is 27 MHz and wherein the frequency of the bottom electrode is 2 MHz.

15. The method as recited in

claim 12

wherein the process gas includes a fluorocarbon containing gas.

16. The method as recited in

claim 15

wherein the fluorocarbon gas is C4F8.

17. The method as recited in

claim 15

wherein the process gas further includes Argon, Nitrogen and Oxygen.

18. The method as recited in

claim 1

wherein the substrate includes a dielectric layer that is etched by the plasma.

19. The method as recited in

claim 18

wherein the dielectric layer is TEOS, BPSG or thermal oxide.

10. The method as recited in claim wherein the insulating shroud is removable from the process chamber.