Solid-state image sensor
First Claim
1. A solid-state image sensor comprising:
- a semiconductor substrate;
a photoelectric conversion portion formed above said semiconductor substrate; and
noise cancelers each formed, adjacent to said photoelectric conversion portion, on said semiconductor substrate through an insulating film, for removing noise of a signal read from said photoelectric conversion portion, wherein said semiconductor substrate has a conductive type opposite to a conductive type of a charge of said signal, and has a first region where concentration of impurities for determining said conductive type is high and a second region where concentration of said impurities on said first region is low.
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Abstract
A solid-state image sensor comprises a semiconductor substrate, a photoelectric conversion portion formed above the semiconductor substrate, and noise cancelers each formed, adjacent to the photoelectric conversion portion, on the semiconductor substrate through an insulating film, for removing noise of a signal read from the photoelectric conversion portion, wherein the semiconductor substrate has a conductive type opposite to a conductive type of a charge of the signal, and has a first region where concentration of impurities for determining the conductive type is high and a second region where concentration of the impurities on the first region is low.
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Citations
12 Claims
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1. A solid-state image sensor comprising:
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a semiconductor substrate;
a photoelectric conversion portion formed above said semiconductor substrate; and
noise cancelers each formed, adjacent to said photoelectric conversion portion, on said semiconductor substrate through an insulating film, for removing noise of a signal read from said photoelectric conversion portion, wherein said semiconductor substrate has a conductive type opposite to a conductive type of a charge of said signal, and has a first region where concentration of impurities for determining said conductive type is high and a second region where concentration of said impurities on said first region is low. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A solid-state image sensor comprising:
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a semiconductor substrate;
a photoelectric conversion portion formed above said semiconductor substrate;
a third region formed above said photoelectric conversion portion, having a same conductive type as that of a first region and having almost a same impurity concentration as that of said first region; and
noise cancelers each formed, adjacent to said photoelectric conversion portion, on said semiconductor substrate through an insulating film, for removing noise of a signal read from said photoelectric conversion portion, wherein said semiconductor substrate has a conductive type opposite to a conductive type of an electric charge of said signal, and has said first region where concentration of impurities for determining said conductive type is high and a second region where concentration of said impurities on said first region is low. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification