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Solid-state image sensor

  • US 20010000623A1
  • Filed: 12/04/2000
  • Published: 05/03/2001
  • Est. Priority Date: 07/04/1997
  • Status: Active Grant
First Claim
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1. A solid-state image sensor comprising:

  • a semiconductor substrate;

    a photoelectric conversion portion formed above said semiconductor substrate; and

    noise cancelers each formed, adjacent to said photoelectric conversion portion, on said semiconductor substrate through an insulating film, for removing noise of a signal read from said photoelectric conversion portion, wherein said semiconductor substrate has a conductive type opposite to a conductive type of a charge of said signal, and has a first region where concentration of impurities for determining said conductive type is high and a second region where concentration of said impurities on said first region is low.

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