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MOS-gated power device having extended trench and doping zone and process for forming same

  • US 20010000919A1
  • Filed: 11/30/2000
  • Published: 05/10/2001
  • Est. Priority Date: 05/19/1999
  • Status: Abandoned Application
First Claim
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1. A trench MOS-gated device comprising:

  • a substrate including an upper layer, said substrate comprising doped monocrystalline semiconductor material of a first conduction type;

    an extended trench in said upper layer, said trench having a bottom portion filled with a dielectric material, said material forming a thick dielectric layer in said bottom of said trench, said trench further having an upper portion lined with a dielectric material and substantially filled with a conductive material, said filled upper portion of said trench forming a gate region;

    a doped extended zone of a second opposite conduction type extending from an upper surface into said upper layer on one side of said trench;

    a doped well region of said second conduction type overlying a drain zone of said first conduction type in said upper layer on the opposite side of said trench, said drain zone being substantially insulated from said extended zone by said thick dielectric layer in said bottom portion of said trench;

    a heavily doped source region of said first conduction type and a heavily doped body region of said second conduction type disposed in said well region at said upper surface;

    an interlevel dielectric layer on said upper surface overlying said gate and source regions; and

    a metal layer overlying said upper surface and said interlevel dielectric layer, said metal layer being in electrical contact with said source and body regions and said extended zone.

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