Semiconductor device and method for forming the same
First Claim
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1. A method for manufacturing a semiconductor device comprising the steps of:
- forming an insulating film over a substrate;
forming a semiconductor film on said insulating film;
first heating said semiconductor film at a first temperature of 500°
C. or more;
a second heating said semiconductor film after said first heating at a second temperature of 700°
C. or more;
forming a gate insulating film over said semiconductor film after said second heating; and
forming a gate electrode over said gate insulating film, wherein said second temperature is higher than said first temperature.
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Abstract
A semiconductor device and a method for forming the same. The semiconductor device comprises an insulating or semiconductor substrate, a thermally-contractive insulating film which is formed on said substrate and provided with grooves, and a semiconductor film which is formed on the thermally-contractive insulating film and divided in an islandish form through the grooves. The thermally-contractive insulating film is contracted in a heat process after the semiconductor film is formed.
6 Citations
27 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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forming an insulating film over a substrate;
forming a semiconductor film on said insulating film;
first heating said semiconductor film at a first temperature of 500°
C. or more;
a second heating said semiconductor film after said first heating at a second temperature of 700°
C. or more;
forming a gate insulating film over said semiconductor film after said second heating; and
forming a gate electrode over said gate insulating film, wherein said second temperature is higher than said first temperature. - View Dependent Claims (2, 3, 4, 5)
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6. A method for manufacturing a semiconductor device comprising the steps of:
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forming an insulating film over a substrate;
forming a semiconductor film on said insulating film;
first heating said semiconductor film at a first temperature to crystallize said semiconductor film;
second heating the crystallized semiconductor at a second temperature higher than said first temperature; and
third heating said crystallized semiconductor film in an atmosphere containing oxygen. - View Dependent Claims (7, 8, 9)
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10. A method for manufacturing a semiconductor device comprising the steps of:
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forming an insulating film over a substrate;
forming a semiconductor film on said insulating film;
first heating said semiconductor film at a first temperature 500 to 700°
C.;
second heating said semiconductor film at a second temperature of 700 to 1000°
C.; and
third heating said semiconductor film in an atmosphere containinbg oxygen. - View Dependent Claims (11, 12, 13, 14)
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15. A method for manufacturing a semiconductor device comprising the steps of:
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forming an insulating film over a substrate;
forming a semiconductor film on said insulating film;
first heating said semiconductor film at a temperature to crystallize said semiconductor film;
second heating the crystallized semiconductor film at a second temperature higher than said first temperature; and
third said crystallized semiconductor film to form a gate insulating film on said crystallized semiconductor film. - View Dependent Claims (16, 17, 18)
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19. A method for manufacturing a semiconductor device comprising the steps of:
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forming an insulating film over a substrate;
forming a semiconductor film on said insulating film;
first heating said semiconductor film at a first temperature of 500 to 700°
C.;
second heating said semiconductor film at a second temperature of 700 to 1000°
C.;
third heating said semiconductor film to from a gate insulating film on said semiconductor film; and
forming a gate electrode over said semiconductor film with said gate insulating film interposed therebetween. - View Dependent Claims (20, 21, 22, 23)
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24. A method for manufacturing a semiconductor device comprising the steps of:
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forming an insulating film over a substrate;
forming a semiconductor film on siad insulating film;
first heating said semiconductor film to form crystallize said semiconductor film at a first temperature of 500 to 700°
C.;
second heating the crystallized semiconductor film at a second temperature of 700 to 1000°
C., andthird heating said crystallized semiconductor film in an atmosphere containing oxygen. - View Dependent Claims (25, 26, 27)
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Specification