×

Semiconductor device and method for forming the same

  • US 20010001073A1
  • Filed: 12/29/2000
  • Published: 05/10/2001
  • Est. Priority Date: 03/27/1991
  • Status: Active Grant
First Claim
Patent Images

1. A method for manufacturing a semiconductor device comprising the steps of:

  • forming an insulating film over a substrate;

    forming a semiconductor film on said insulating film;

    first heating said semiconductor film at a first temperature of 500°

    C. or more;

    a second heating said semiconductor film after said first heating at a second temperature of 700°

    C. or more;

    forming a gate insulating film over said semiconductor film after said second heating; and

    forming a gate electrode over said gate insulating film, wherein said second temperature is higher than said first temperature.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×