Display device

• US 20010002144A1
• Filed: 12/27/2000
• Published: 05/31/2001
• Est. Priority Date: 03/26/1997
• Status: Active Grant

• Current Assignee: Shunpei Yamazaki
• Original Assignee: Shunpei Yamazaki
• Inventors: Yamazaki, Shunpei
• Granted Patent: US 6,927,826 B2
• Time in Patent Office: Days
• US Class Current: 349/44
• CPC Class Codes: G02F 1/133334 Electromagnetic shields
• CPC Class Codes: G02F 1/133385 with cooling means, e.g. fans
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence

Abstract

There is disclosed a structure for radiating heat generated by TFTs in a liquid crystal panel. A DLC film 125 is provided on a resin interlayer film 123 disposed on the TFTs 105, 109, and 113. The DLC film 125 can be easily formed on the resin film, and has high heat conductivity, so that the film can be made to function as a heat radiating layer.

Claims

1. A device having at least one active matrix panel, said active matrix panel comprising:

a substrate having an insulating surface;

an active matrix circuit comprising first thin film transistors formed over said substrate;

a driving circuit comprising second thin film transistors for driving said active matrix circuit;

a first interlayer insulating film formed over the first and second thin film transistors;

an electromagnetic shield pattern formed over said first interlayer insulating film;

a second interlayer insulating film formed over said first interlayer insulating film and said electromagnetic shield pattern; and

reflective pixel electrodes formed over said second interlayer insulating film and electrically connected to the first thin film transistors.

2. A device according to

claim 1

wherein said electromagnetic shield functions so that said reflective pixel electrodes do not interfere with said first thin film transistors.

3. A device according to

claim 1

wherein said reflective pixel electrodes comprise aluminum.

4. A device according to

claim 1

wherein said substrate is a glass substrate.

5. A device according to

claim 1

wherein the first thin film transistors are of an N-channel type.

6. A device according to

claim 1

wherein each of said first and second thin film transistors is of a top-gate type.

7. A device according to

claim 1

wherein each of said first and second thin film transistors is of a bottom-gate type.

8. A device according to

claim 1

wherein said device is a portable information processing terminal, which comprises a main body, an integrated circuit in the main body, said active matrix panel, a camera portion for incorporating a picture image, and an operation switch.

9. A head mount display using the active matrix panel according to

claim 1

.

10. A device according to

claim 1

further comprising an antenna wherein said active matrix panel displays a map information received by said antenna from an artificial satellite.

11. A device according to

claim 1

wherein said device is a portable telephone, which comprises a main body, an antenna, an audio output portion, said active matrix panel, an operation switch, and an audio input portion.

12. A video camera having the active matrix panel according to

claim 1

.

13. A device according to

claim 1

wherein said device is a projector having said active matrix panel, a light source, an optical system and a screen.

14. A device having at least one active matrix panel, said active matrix panel comprising:

a substrate having an insulating surface;

an active matrix circuit comprising first thin film transistors formed over said substrate;

a driving circuit comprising second thin film transistors for driving said active matrix circuit;

a first interlayer insulating film formed over the first and second thin film transistors;

at least one wiring formed on said first interlayer insulating film and electrically connected to one of source or drain of at least one of said first and second thin film transistors through a contact hole of said first interlayer insulating film;

a second interlayer insulating film comprising an organic resin formed over said first interlayer insulating film and said wiring;

an electromagnetic shield pattern formed over said first interlayer insulating film;

a third interlayer insulating film formed over said first interlayer insulating film and said electromagnetic shield pattern; and

reflective pixel electrodes formed over said second interlayer insulating film and electrically connected to the first thin film transistors.

15. A device according to

claim 14

wherein said electromagnetic shield functions so that said reflective pixel electrodes do not interfere with said first thin film transistors and said at least one wiring.

16. A device according to

claim 14

wherein said reflective pixel electrodes comprise aluminum.

17. A device according to

claim 14

wherein said substrate is a glass substrate.

18. A device according to

claim 14

wherein the first thin film transistors are of an N-channel type.

19. A device according to

claim 14

wherein each of said first and second thin film transistors is of a top-gate type.

20. A device according to

claim 14

wherein each of said first and second thin film transistors is of a bottom-gate type.

21. A device according to

claim 14

wherein said device is a portable information processing terminal, which comprises a main body, an integrated circuit in the main body, said active matrix panel, a camera portion for incorporating a picture image, and an operation switch.

22. A head mount display using the active matrix panel according to

claim 14

.

23. A device according to

claim 14

further comprising an antenna wherein said active matrix panel displays a map information received by said antenna from an artificial satellite.

24. A device according to

claim 14

wherein said device is a portable telephone, which comprises a main body, an antenna, an audio output portion, said active matrix panel, an operation switch, and an audio input portion.

25. A video camera having the active matrix panel according to

claim 14

.

26. A device according to

claim 14

wherein said device is a projector having said active matrix panel, a light source, an optical system and a screen.

27. A device according to

claim 14

wherein said second interlayer insulating film comprises a material selected from the group consisting of polyimide, polyimide amide, polyamide, acryl, and epoxy.

28. A device according to

claim 14

wherein said wiring comprises a pair of first layers comprising titanium and a second layer comprising aluminum interposed therebetween.

29. A device having at least one active matrix panel, said active matrix panel comprising:

a substrate having an insulating surface;

an active matrix circuit comprising first thin film transistors formed over said substrate;

a driving circuit comprising second thin film transistors for driving said active matrix circuit;

a first interlayer insulating film formed over the first and second thin film transistors;

at least one wiring formed on said first interlayer insulating film and electrically connected to one of source or drain of at least one of said first and second thin film transistors through a contact hole of said first interlayer insulating film;

a second interlayer insulating film formed over said first interlayer insulating film and said wiring;

an electromagnetic shield pattern formed over said first interlayer insulating film;

a third interlayer insulating film comprising an organic resin formed over said second interlayer insulating film and said electromagnetic shield pattern; and

reflective pixel electrodes formed over said third interlayer insulating film and electrically connected to the first thin film transistors.

30. A device according to

claim 29

wherein said electromagnetic shield functions so that said reflective pixel electrodes do not interfere with said first thin film transistors and said at least one wiring.

31. A device according to

claim 29

wherein said first interlayer insulating film comprises silicon oxide.

32. A device according to

claim 29

wherein said reflective pixel electrodes comprise aluminum.

33. A device according to

claim 29

wherein said substrate is a glass substrate.

34. A device according to

claim 29

wherein the first thin film transistors are of an N-channel type.

35. A device according to

claim 29

wherein each of said first and second thin film transistors is of a top-gate type.

36. A device according to

claim 29

wherein each of said first and second thin film transistors is of a bottom-gate type.

37. A device according to

claim 29

wherein said device is a portable information processing terminal, which comprises a main body, an integrated circuit in the main body, said active matrix panel, a camera portion for incorporating a picture image, and an operation switch.

38. A head mount display using the active matrix panel according to

claim 29

.

39. A device according to

claim 29

further comprising an antenna wherein said active matrix panel displays a map information received by said antenna from an artificial satellite.

40. A device according to

claim 29

wherein said device is a portable telephone, which comprises a main body, an antenna, an audio output portion, said active matrix panel, an operation switch, and an audio input portion.

41. A video camera having the active matrix panel according to

claim 29

.

42. A device according to

claim 29

wherein said device is a projector having said active matrix panel, a light source, an optical system and a screen.

43. A device according to

claim 29

wherein said second interlayer insulating film comprises a material selected from the group consisting of polyimide, polyimide amide, polyamide, acryl, and epoxy.

44. A device according to

claim 29

wherein said wiring comprises a pair of first layers comprising titanium and a second layer comprising aluminum interposed therebetween.

45. A device according to

claim 29

wherein said third interlayer insulating film comprises polyimide.

46. A device having at least one active matrix panel, said active matrix panel comprising:

a substrate having an insulating surface;

an active matrix circuit comprising first thin film transistors formed over said substrate;

a driving circuit comprising second thin film transistors for driving said active matrix circuit;

a first interlayer insulating film formed over the first and second thin film transistors;

at least one drain electrode formed on said first interlayer insulating film and electrically connected to drain of at least one of said first thin film transistors through a contact hole of said first interlayer insulating film;

a second interlayer insulating film formed over said first interlayer insulating film and said wiring;

an electromagnetic shield pattern formed over said first interlayer insulating film;

a third interlayer insulating film comprising an organic resin formed over said first interlayer insulating film and said electromagnetic shield pattern; and

at least one reflective pixel electrode formed over said third interlayer insulating film and electrically connected to said drain electrode through a hole opened through said third interlayer insulating film, said electromagnetic shield pattern and said second interlayer insulating film,

wherein said third interlayer insulating film extends into a gap between said reflective pixel electrode and an inner edge of the opening of said electromagnetic shield pattern.

47. A device according to

claim 46

wherein said first interlayer insulating film comprises silicon oxide.

48. A device according to

claim 46

wherein said pixel electrodes comprise aluminum.

49. A device according to

claim 46

wherein said substrate is a glass substrate.

50. A device according to

claim 46

wherein the first thin film transistors are of an N-channel type.

51. A device according to

claim 46

wherein each of said first and second thin film transistors is of a top-gate type.

52. A device according to

claim 46

wherein each of said first and second thin film transistors is of a bottom-gate type.

53. A device according to

claim 46

wherein said device is a portable information processing terminal, which comprises a main body, an integrated circuit in the main body, said active matrix panel, a camera portion for incorporating a picture image, and an operation switch.

54. A head mount display using the active matrix panel according to

claim 46

.

55. A device according to

claim 46

further comprising an antenna wherein said active matrix panel displays a map information received by said antenna from an artificial satellite.

56. A device according to

claim 46

wherein said device is a portable telephone, which comprises a main body, an antenna, an audio output portion, said active matrix panel, an operation switch, and an audio input portion.

57. A video camera having the active matrix panel according to

claim 46

.

58. A device according to

claim 46

wherein said device is a projector having said active matrix panel, a light source, an optical system and a screen.

59. A device according to

claim 46

wherein said second interlayer insulating film comprises a material selected from the group consisting of polyimide, polyimide amide, polyamide, acryl, and epoxy.

60. A device according to

claim 46

wherein said drain electrode comprises a pair of first layers comprising titanium and a second layer comprising aluminum interposed therebetween.

61. A device according to

claim 46

wherein said third interlayer insulating film comprises polyimide.

62. A device having at least one active matrix panel, said active matrix panel comprising:

a substrate having an insulating surface;

an active matrix circuit comprising first thin film transistors formed over said substrate;

a driving circuit comprising second thin film transistors for driving said active matrix circuit;

a first interlayer insulating film formed over the first and second thin film transistors;

at least one drain electrode formed on said first interlayer insulating film and electrically connected to a drain of at least one of said first thin film transistors through a contact hole of said first interlayer insulating film;

a second interlayer insulating film comprising an organic resin formed over said first interlayer insulating film and said drain electrode;

at least one pixel electrode formed over said second interlayer insulating film and electrically connected to one of the first thin film transistors via said drain electrode,

wherein an insulating layer comprising silicon nitride is formed between said second interlayer insulating film and each of said first interlayer insulating film and said at least one drain electrode.

63. A device according to

claim 62

wherein said first interlayer insulating film comprises silicon oxide.

64. A device according to

claim 62

wherein said pixel electrodes comprises aluminum.

65. A device according to

claim 62

wherein said substrate is a glass substrate.

66. A device according to

claim 62

wherein each of said first and second thin film transistors is of a top-gate type.

67. A device according to

claim 62

wherein each of said first and second thin film transistors is of a bottom-gate type.

68. A device according to

claim 62

wherein said device is a portable information processing terminal, which comprises a main body, an integrated circuit in the main body, said active matrix panel, a camera portion for incorporating a picture image, and an operation switch.

69. A head mount display using the active matrix panel according to

claim 62

.

70. A device according to

claim 62

further comprising an antenna wherein said active matrix panel displays a map information received by said antenna from an artificial satellite.

71. A device according to

claim 62

wherein said device is a portable telephone, which comprises a main body, an antenna, an audio output portion, said active matrix panel, an operation switch, and an audio input portion.

72. A video camera having the active matrix panel according to

claim 62

.

73. A device according to

claim 62

wherein said device is a projector having said active matrix panel, a light source, an optical system and a screen.

74. A device according to

claim 62

wherein said second interlayer insulating film comprises a material selected from the group consisting of polyimide, polyimide amide, polyamide, acryl, and epoxy.

75. A device according to

claim 62

wherein said drain electrode comprises a pair of first layers comprising titanium and a second layer comprising aluminum interposed therebetween.

76. A device having at least one active matrix panel, said active matrix panel comprising:

a substrate having an insulating surface;

an active matrix circuit comprising first thin film transistors formed over said substrate;

a driving circuit comprising second thin film transistors for driving said active matrix circuit;

a first interlayer insulating film formed over the first and second thin film transistors;

at least one wiring formed on said first interlayer insulating film and electrically connected to one of source or drain of at least one of said first and second thin film transistors through a contact hole of said first interlayer insulating film;

a second interlayer insulating film comprising an organic resin formed over said first interlayer insulating film and said wiring;

at least one pixel electrode formed over said second interlayer insulating film and electrically connected to one of the first thin film transistors,

wherein an insulating layer comprising silicon nitride is formed between said second interlayer insulating film and each of said first interlayer insulating film and said at least one wiring.

77. A device according to

claim 76

wherein said first interlayer insulating film comprises silicon oxide.

78. A device according to

claim 76

wherein said pixel electrodes comprise aluminum.

79. A device according to

claim 76

wherein said substrate is a glass substrate.

80. A device according to

claim 76

wherein each of said first and second thin film transistors is of a top-gate type.

81. A device according to

claim 76

wherein each of said first and second thin film transistors is of a bottom-gate type.

82. A device according to

claim 76

wherein said device is a portable information processing terminal, which comprises a main body, an integrated circuit in the main body, said active matrix panel, a camera portion for incorporating a picture image, and an operation switch.

83. A head mount display using the active matrix panel according to

claim 76

.

84. A device according to

claim 76

further comprising an antenna wherein said active matrix panel displays a map information received by said antenna from an artificial satellite.

85. A device according to

claim 76

wherein said device is a portable telephone, which comprises a main body, an antenna, an audio output portion, said active matrix panel, an operation switch, and an audio input portion.

86. A video camera having the active matrix panel according to

claim 76

.

87. A device according to

claim 76

wherein said device is a projector having said active matrix panel, a light source, an optical system and a screen.

88. A device according to

claim 76

wherein said second interlayer insulating film comprises a material selected from the group consisting of polyimide, polyimide amide, polyamide, acryl, and epoxy.

89. A device according to

claim 76

wherein said wiring comprises a pair of first layers comprising titanium and a second layer comprising aluminum interposed therebetween.

90. A device having at least one active matrix panel, said active matrix panel comprising:

a substrate having an insulating surface;

an active matrix circuit comprising first thin film transistors formed over said substrate;

a driving circuit comprising second thin film transistors for driving said active matrix circuit;

a first interlayer insulating film formed over the first and second thin film transistors;

at least one first electrode formed on said first interlayer insulating film and electrically connected to said first thin film transistors;

at least one second electrode formed on said first interlayer insulating film and electrically connected to said second thin film transistors;

a second interlayer insulating film comprising an organic resin formed over said first interlayer insulating film and said wiring;

at least one pixel electrode formed over said second interlayer insulating film and electrically connected to one of the first thin film transistors,

wherein an insulating layer comprising silicon nitride is formed on said first interlayer insulating film, said at least one first electrode and said at least second electrode.

91. A device according to

claim 90

wherein said first interlayer insulating film comprises silicon oxide.

92. A device according to

claim 90

wherein said device is a portable information processing terminal, which comprises a main body, an integrated circuit in the main body, said active matrix panel, a camera portion for incorporating a picture image, and an operation switch.

93. A head mount display using the active matrix panel according to

claim 90

.

94. A device according to

claim 90

further comprising an antenna wherein said active matrix panel displays a map information received by said antenna from an artificial satellite.

95. A device according to

claim 90

wherein said device is a portable telephone, which comprises a main body, an antenna, an audio output portion, said active matrix panel, an operation switch, and an audio input portion.

96. A video camera having the active matrix panel according to

claim 90

.

97. A device according to

claim 90

wherein said device is a projector having said active matrix panel, a light source, an optical system and a screen.

98. A device according to

claim 90

wherein said second interlayer insulating film comprises a material selected from the group consisting of polyimide, polyimide amide, polyamide, acryl, and epoxy.

99. A device having at least one active matrix panel, said active matrix panel comprising:

a substrate having an insulating surface;

an active matrix circuit comprising first thin film transistors formed over said substrate;

a driving circuit comprising second thin film transistors for driving said active matrix circuit;

a first interlayer insulating film formed over the first and second thin film transistors;

at least one first electrode formed on said first interlayer insulating film and electrically connected to said first thin film transistors;

at least one second electrode formed on said first interlayer insulating film and electrically connected to said second thin film transistors;

a second interlayer insulating film comprising an organic resin formed over said first interlayer insulating film and said wiring;

an electromagnetic shield pattern formed on said second interlayer insulating film;

a third interlayer insulating film formed over said second interlayer insulating film and said electromagnetic shield pattern; and

at least one pixel electrode formed over said third interlayer insulating film and electrically connected to one of the first thin film transistors,

wherein an insulating layer comprising silicon nitride is formed on said first interlayer insulating film, said at least one first electrode and said at least second electrode.

100. A device according to

claim 99

wherein said first interlayer insulating film comprises silicon oxide.

101. A device according to

claim 99

wherein said device is a portable information processing terminal, which comprises a main body, an integrated circuit in the main body, said active matrix panel, a camera portion for incorporating a picture image, and an operation switch.

102. A head mount display using the active matrix panel according to

claim 99

.

103. A device according to

claim 99

further comprising an antenna wherein said active matrix panel displays a map information received by said antenna from an artificial satellite.

104. A device according to

claim 99

wherein said device is a portable telephone, which comprises a main body, an antenna, an audio output portion, said active matrix panel, an operation switch, and an audio input portion.

105. A video camera having the active matrix panel according to

claim 99

.

106. A device according to

claim 99

wherein said device is a projector having said active matrix panel, a light source, an optical system and a screen.

107. A device having at least one active matrix panel, said active matrix panel comprising:

a substrate having an insulating surface;

an active matrix circuit comprising first thin film transistors formed over said substrate;

a driving circuit comprising second thin film transistors for driving said active matrix circuit;

a first interlayer insulating film formed over the first and second thin film transistors;

at least one first electrode formed on said first interlayer insulating film and electrically connected to said first thin film transistors;

at least one second electrode formed on said first interlayer insulating film and electrically connected to said second thin film transistors;

an insulating layer formed on said first interlayer insulating film and covering said first electrode and said second electrode wherein said insulating film comprises silicon nitride;

a capacitor forming electrode formed on said insulating layer comprising silicon nitride to form a capacitor associated with said first thin film transistor;

a second interlayer insulating film comprising an organic resin formed on said insulating layer comprising silicon nitride and said capacitor forming electrode;

at least one pixel electrode formed over said second interlayer insulating film and electrically connected to one of the first thin film transistors.

108. A device having at least one active matrix panel, said active matrix panel comprising:

a substrate having an insulating surface;

an active matrix circuit comprising first thin film transistors formed over said substrate;

a driving circuit comprising second thin film transistors for driving said active matrix circuit;

a first interlayer insulating film formed over the first and second thin film transistors;

at least one wiring formed on said first interlayer insulating film and electrically connected to at least one of said first and second thin film transistors;

an insulating layer comprising silicon nitride formed on said first interlayer insulating film and said at least one wiring;

a second interlayer insulating film comprising an organic resin formed over said first interlayer insulating film and said wiring with said insulating layer interposed therebetween;

an electromagnetic shield pattern formed on said second interlayer insulating film;

a third interlayer insulating film comprising an organic resin formed over said second interlayer insulating film and said electromagnetic shield pattern; and

at least one pixel electrode formed over said third interlayer insulating film and electrically connected to one of the first thin film transistors.