Method for fabricating semiconductor device and apparatus for fabricating same
First Claim
Patent Images
1. A method for fabricating a semiconductor device comprising the steps of:
- forming an interconnect made of copper overlying a substrate;
conducting a pretreatment of the copper at 300°
C. or less; and
forming a dielectric film on the copper by a chemical vapor deposition method.
1 Assignment
0 Petitions
Accused Products
Abstract
A method for fabricating a semiconductor device wherein an interconnect made of copper overlying a substrate is pretreated at a specified temperature, for example, at 300° C. or less; and a dielectric film is formed on the copper at a temperature higher than that of the pretreatment. In accordance with the present invention, the adhesion between the copper and the dielectric film is improved by conducting the pretreatment of the dielectric film for reducing an oxide layer of the copper surface, and the agglomeration of the copper can be prevented by the pretreatment.
-
Citations
10 Claims
-
1. A method for fabricating a semiconductor device comprising the steps of:
-
forming an interconnect made of copper overlying a substrate;
conducting a pretreatment of the copper at 300°
C. or less; and
forming a dielectric film on the copper by a chemical vapor deposition method.
-
-
2. A method for fabricating a semiconductor device comprising the steps of:
-
forming an interconnect made of copper overlying a substrate;
conducting a pretreatment of the copper in a deposition chamber at a specified temperature; and
forming a dielectric film on the copper by a chemical vapor deposition method in the a deposition chamber at a temperature higher than the specified temperature. - View Dependent Claims (3, 4, 5, 6, 7)
-
-
8. An apparatus for fabricating a semiconductor device comprising:
-
a deposition chamber for receiving a wafer having a copper interconnect layer thereon;
a mechanism for conducting a pretreatment on the wafer at a specified temperature; and
a mechanism for depositing a dielectric film on the copper interconnect layer at a temperature higher than the specified temperature. - View Dependent Claims (9, 10)
-
Specification