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Method for fabricating semiconductor device and apparatus for fabricating same

  • US 20010003064A1
  • Filed: 12/04/2000
  • Published: 06/07/2001
  • Est. Priority Date: 12/02/1999
  • Status: Abandoned Application
First Claim
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1. A method for fabricating a semiconductor device comprising the steps of:

  • forming an interconnect made of copper overlying a substrate;

    conducting a pretreatment of the copper at 300°

    C. or less; and

    forming a dielectric film on the copper by a chemical vapor deposition method.

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