HEAT SINK FOR A SEMICONDUCTOR DEVICE

• US 20010003377A1
• Filed: 07/19/1999
• Published: 06/14/2001
• Est. Priority Date: 07/28/1998
• Status: Abandoned Application

• Current Assignee: Korea Advanced Institute of Science and Technology
• Original Assignee: Korea Advanced Institute of Science and Technology
• Inventors: BAIK, YOUNG-JOON, HONG, KYUNG TAE, YOO, MYOUNG KI
• Application Number:
  US09/357,058
• Publication Number:
  US 20010003377A1
• Time in Patent Office: Days
• US Class Current: 257/712
• CPC Class Codes: H01L 23/3732 Diamonds
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]

Abstract

A heat sink for a semiconductor device comprises a tungsten-copper composite body and a diamond film coated on the surface of the body. A method for fabricating a heat sink for a semiconductor comprises the steps of fabricating a tungsten-copper composite heat sink, modifying a surface of the heat sink by selectively dissolving copper from the surface of the heat sink, carrying out a process for supplying nuclei for growth of a diamond film on the modified surface of the heat sink, and coating the thusly processed surface of the heat sink with a diamond film. Preferably, a process for etching of a tungsten grain precedes selective dissolution of the copper.

Claims

1. A heat sink for a semiconductor device, comprising:

a) a tungsten-copper composite body; and

b) a diamond film coated on the surface of the body.

2. A method for fabricating a heat sink for a semiconductor, comprising:

a) fabricating a tungsten-copper composite heat sink;

b) modifying a surface of the heat sink by selectively dissolving copper from the surface of the heat sink;

c) carrying out a process for supplying nuclei for growth of a diamond film on the modified surface of the heat sink; and

d) coating the thusly processed surface of the heat sink with a diamond film.

3. The method of

claim 2

, wherein a process for etching tungsten grains precedes selective dissolution of the copper.

4. The method of

claim 2

or

3

, wherein the copper is dissolved in an aqueous acid solution comprising HNO₃.

5. The method of

claim 2

or

3

, wherein the process for supplying nuclei for growth of the diamond film is carried out in an acetone solution containing fine diamond powder.

6. The method of

claim 3

, wherein the process for etching the tungsten grains is carried out in a Murakami solution (potassium ferricyanide [K₃Fe(CN)₆]+sodium hydroxide[NaOH]+water[H₂O]).