Slurry for chemical mechanical polishing

• US 20010006225A1
• Filed: 12/22/2000
• Published: 07/05/2001
• Est. Priority Date: 12/28/1999
• Status: Abandoned Application

• Current Assignee: NEC Electronics Corporation (Renesas Electronics Corporation), Tokyo Magnetic Printing Company Limited (TOPPAN Holdings, Inc.)
• Original Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Inventors: Aoyagi, Kenichi, Tsuchiya, Yasuaki, Sakurai, Shin, Wake, Tomoko, Itakura, Tetsuyuki
• Application Number:
  US09/745,102
• Publication Number:
  US 20010006225A1
• Time in Patent Office: Days
• US Class Current: 252/79
• CPC Class Codes: C09G 1/02 containing abrasives or grinding agents abrasives as such C09K3/14; polishing of semi-conductors H01L
• CPC Class Codes: C09K 3/1463 Aqueous liquid suspensions
• CPC Class Codes: H01L 21/3212 by chemical mechanical polishing [CMP]
• CPC Class Codes: H01L 21/7684 Smoothing; Planarisation

Abstract

The present invention relates to a slurry used for chemical mechanical polishing of a substrate having a copper-containing film at the surface, which slurry contains an abrasive, an oxidizing agent, and an adhesion-inhibitor preventing adhesion of a polishing product to a polishing pad. With the polishing slurry of the present invention, even when the copper-containing metal film to be polished has a large thickness or a large area and therefore the amount of the copper-containing metal to be polished is large, adhesion of polishing product to a polishing pad is suppressed and CMP can be completed satisfactorily in a single polishing operation without discontinuation.

Claims

1. A slurry used for chemical mechanical polishing of a substrate having a copper-containing film at the surface, which slurry contains an abrasive, an oxidizing agent, and an adhesion-inhibitor preventing adhesion of a polishing product to a polishing pad.

2. A slurry used for chemical mechanical polishing according to

claim 1

, wherein the adhesion-inhibitor is citric acid.

3. A slurry used for chemical mechanical polishing according to

claim 1

, which has a pH of 4 to 8.

4. A slurry used for chemical mechanical polishing according to

claim 1

, wherein the content of the adhesion-inhibitor is 0.01 to 5 wt %.

5. A slurry used for chemical mechanical polishing according to

claim 1

, which further contains a carboxylic acid other than citric acid or an amino acid.

6. A slurry used for chemical mechanical polishing according to

claim 1

, wherein the abrasive is silica grains or alumina grains and its content is 1 to wt %.

7. A slurry used for chemical mechanical polishing according to

claim 1

, wherein the oxidizing agent is hydrogen peroxide and its content is 0.01 to 15 wt %.

8. A slurry used for chemical mechanical polishing according to

claim 1

, which further contains an antioxidant.

9. A slurry used for chemical mechanical polishing according to

claim 1

, which further contains benztoriazole or its derivative.