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Method and structure for bonding layers in a semiconductor device

  • US 20010006846A1
  • Filed: 02/23/2001
  • Published: 07/05/2001
  • Est. Priority Date: 04/26/1999
  • Status: Abandoned Application
First Claim
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1. A semiconductor device fabrication method for bonding second and third layers formed of materials having weak adhesion characteristics with respect to each other, said method comprising the steps of:

  • providing a first layer, said first layer being electrically non-conductive, said first layer having properties which provide relatively strong adhesion when in contact with either said second layer or said third layer;

    forming said second layer on said first layer, said second layer having a first surface in contact with said first layer and having a second surface opposite said first surface, said second layer being formed to include anchoring channels that pass from said first surface of said second layer to said first layer, said second layer being electrically conductive; and

    depositing said third layer on said second surface of said second layer and into said anchoring channels within said second layer such that said third layer bonds to said first layer, thereby providing structural stability in joining said first, second and third layers.

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