Film forming apparatus and film forming method

• US 20010007244A1
• Filed: 01/03/2001
• Published: 07/12/2001
• Est. Priority Date: 01/06/2000
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Matsuse, Kimihiro
• Granted Patent: US 6,576,062 B2
• Time in Patent Office: Days
• US Class Current: 118/719
• CPC Class Codes: C23C 16/45519 Inert gas curtains
• CPC Class Codes: C23C 16/45561 Gas plumbing upstream of the reaction chamber
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas
• CPC Class Codes: C23C 16/4584 the substrate being rotated

Abstract

A film forming apparatus and method of the present invention include a substrate holding section for holding a plurality of substrates in a plane within a chamber, first and second process gas discharge sections provided opposite to the substrate holding section to discharge first and second process gases, a rotation mechanism for rotating the substrate holder, and a heater for heating the substrates. While the substrates are rotating as the substrate holding section rotates, the substrate holding section, first and second mono atomic layers are alternately stacked on the corresponding substrates. A compound film is therefore formed through a reaction involved under heating.

Claims

1. A film forming apparatus comprising:

a chamber for holding substrates;

a substrate holding section for holding these substrates in the chamber;

a plurality of first process gas discharge sections provided in those positions facing film forming surfaces of the substrates within the chamber, for discharging a first process gas;

a plurality of second process gas discharge sections provided in those positions different from those of the first process gas discharge sections within the chamber, for discharging a second process gas;

a rotation mechanism for rotating the substrate holding section; and

a heating section for heating the substrate, wherein, while the substrates caused are rotating as the substrate holding section rotates, films are alternately formed as a mono atomic layer by the first process gas and as a mono atomic layer by the second process gas on the corresponding substrates.

2. The apparatus according to

claim 1

, wherein the first and second process gas discharge sections are alternately arranged so that the centers of their discharge outlets are aligned with the centers of the substrates on a circumference along which the substrates are rotationally moved.

3. The apparatus according to

claim 1

, wherein a purge gas discharge section is provided between the first process gas discharge section and the second process gas discharge section to provide a purge gas stream as an air curtain.

4. The apparatus according to

claim 1

, wherein the rotation mechanism further has a substrate rotation mechanism for rotating the substrate per se while being held.

5. The apparatus according to

claim 1

, wherein the heating means is provided in a position where the substrate is heated from either above or below the substrate holding member.

6. The apparatus according to

claim 1

, wherein the heating means is provided from both below and above the substrate holding member.

7. The apparatus according to

claim 1

, wherein the first process gas contains any one of elements Ti, Ta, Si, W and Ru, and the second process gas contains N or O.

8. The apparatus according to

claim 7

, wherein the first and second process gases are applied, forming a film of a metal compound selected from the group consisting of Al₂O₃, ZrO₂, TiN, TaN, SiO₂, SiN, SiON, SiOF, WN, WSi and RuO₂.

9. A CVD film forming method comprising the steps of:

dividing an interior of a chamber into a plurality of space areas by an air curtain of a gas stream discharged into a chamber;

repeatedly moving substrates past atmospheres created by a plurality of process gases introduced into the space areas; and

,

thereby, sequentially depositing a mono atomic layer over the substrates to provide a stacked layer and hence a compound film on the substrates through a reaction involved under heating.

13. The method according to

claim 9

, wherein the first process gas contains any one of elements Ti, Ta, Si, W and Ru, and the second process gas contains N or O.

10. A film forming method comprising the steps of:

arranging a plurality of substrates in a plane within a chamber;

discharging first and second process gases, under a revolution of these substrate, from first and second gas discharge sections provided in mutually different positions within the chamber;

thereby sequentially alternately forming a mono atomic layer by the first process gas and a mono atomic layer by a second process gas on the substrates.

11. The method according to

claim 10

, wherein the revolved substrates are rotated.

12. The method according to

claim 10

, wherein the revolving speed of the substrates is determined in accordance with the speeds with which the first and second process gases are adsorbed on the substrates.

14. The method according to

claim 10

, wherein the first process gas contains any one of elements Ti, Ta, Si, W and Ru, and the second process gas contains N or O.