Charge pump circuit

• US 20010007432A1
• Filed: 01/09/2001
• Published: 07/12/2001
• Est. Priority Date: 01/11/2000
• Status: Active Grant

• Current Assignee: Innolux Hong Kong Holding Ltd (InnoLux Corporation)
• Original Assignee: US Philips Corporation (Koninklijke Philips N.V.)
• Inventors: Ayres, John R.A.
• Granted Patent: US 6,404,271 B2
• Time in Patent Office: Days
• US Class Current: 327/536
• CPC Class Codes: H02M 3/073 Charge pumps of the Schenkel-type

Abstract

A charge pump circuit (1) comprises a series of voltage boosting stages (11), each stage (11) comprising a switching means (10) and a capacitive element (12) connected in series between the input to the stage and a respective voltage control terminal (14,15). The voltage control terminals (14,15) comprise at least two groups of terminals receiving respective timed control voltages, and adjacent stages (11) are associated with different terminal groups. The switching means (10) of one or more stages (11) comprises a lateral PIN junction diode. The use of diodes enables the charge pump circuit itself to operate from a lower supply voltage than is possible with the use of TFTs. The use of lateral PIN diodes enables the charge pump circuit to be formed using the same processing as may be required for TFT'"'"'s of the circuit to which the boosted voltage is supplied. This enables the charge pump circuit to be formed on a common substrate with higher voltage TFT circuitry for, for example, an AMLCD.

Claims

1. A charge pump circuit comprising a series of voltage boosting stages, each stage comprising a switching means and a capacitive element connected in series between the input to the stage and a respective voltage control terminal, the output from each stage comprising the node between the switching means and the capacitive element, wherein the voltage control terminals comprise at least two groups of terminals receiving respective timed control voltages, and wherein adjacent stages are associated with different terminal groups, characterised in that the switching means of one or more stages comprises a lateral PIN junction diode.

2. A charge pump circuit as claimed in

claim 1

, wherein the voltage control terminals comprise two groups of terminals, and wherein the control voltages comprise a first clocked control voltage for one group and a second complementary clocked control voltage for the other group.

3. A charge pump circuit as claimed in

claim 1

or

2

, wherein the or each lateral PIN junction diode comprises a lateral gate electrode for allowing an electric field to be applied to the intrinsic region of the diode.

4. A charge pump circuit as claimed in

claim 3

, wherein the intrinsic layer of the PIN diode has n-type doping, and the gate electrode is coupled to a voltage which is at least equal to the voltage at the cathode of the diode during forward bias of the diode.

5. A charge pump circuit as claimed in

claim 3

, wherein the intrinsic layer of the PIN diode has p-type doping, and the gate electrode is coupled to a voltage which is less than the voltage at the anode of the diode during forward bias of the diode.

6. A charge pump circuit as claimed in

claim 4

, adapted to generate a positive voltage greater than the highest level of the input voltage range, wherein the gate electrode is connected to the output of a voltage boosting stage ahead in the series.

7. A charge pump circuit as claimed in

claim 6

, wherein the output of the circuit is provided at the output of an output stage, further stages in the series following the output stage.

8. A charge pump circuit as claimed in

claim 4

, adapted to generate a negative voltage lower than the lowest level of the input voltage range, wherein the gate electrode is connected to the output of a voltage boosting stage behind in the series.

9. A charge pump circuit as claimed in

claim 6

,

7

or 8, wherein the gate electrode is connected to the output of a voltage boosting stage which is associated with the same group of voltage control terminals.

10. A charge pump circuit as claimed in any one of the preceding claims, wherein the diode comprises regions of p-type, intrinsic and n-type conductivity laterally arranged in a polycrystalline silicon film.

11. A charge pump circuit as claimed in

claim 10

, wherein an output load comprises the capacitive element of the output stage.

12. An electronic device including a charge pump circuit as claimed in any one of the preceding claims, wherein the device comprises a substrate with thin-film circuit elements on an insulating surface of the substrate, at least some of the thin-film circuit elements comprising lateral PIN junction diodes of the charge pump circuit.

13. An electronic device as claimed in

claim 12

, wherein the device comprises an active matrix display having on the same substrate the charge pump circuit and a TFT switching array for the display.