Semiconductor device and method of manufacturing the semiconductor device

• US 20010009283A1
• Filed: 01/25/2001
• Published: 07/26/2001
• Est. Priority Date: 01/26/2000
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Suzawa, Hideomi, Arao, Tatsuya
• Granted Patent: US 6,639,265 B2
• Time in Patent Office: Days
• US Class Current: 257/303
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors

Abstract

A semiconductor device having improved reliability is provided. The semiconductor device has a pixel portion. The pixel portion has a TFT and a storage capacitor. The TFT and the storage capacitor has a semiconductor layer which includes first and second regions formed continuously. The TFT has the first region of the semiconductor layer including a channel forming region, a source region and a drain region located outside the channel forming region, a gate insulating film adjacent to the first region of the semiconductor layer, and a gate electrode formed on the gate insulating film. The storage capacitor has the second region of the semiconductor layer, an insulating film formed adjacent to the second region of the semiconductor layer, and a capacitor wiring formed on the insulating film. The second region of the semiconductor layer contains an impurity element for imparting n-type or p-type conductivity. The thickness of the insulating film adjacent to the second region of the semiconductor layer is thinner than that of the film on the region in which the TFT is formed.

Claims

1. A semiconductor device comprising:

a pixel thin film transistor in a pixel portion;

a storage capacitor in the pixel portion;

the pixel thin film transistor including;

a first region of a semiconductor film having a channel forming region, a source region and a drain region;

a gate insulting film being in contact with the first region;

a gate electrode being formed on the gate insulating film;

the storage capacitor including;

a second region of the semiconductor film;

an insulting film being in contact with the second region;

a storage wiring being formed on the insulating film,

wherein the second region includes an impurity to impart an n-type conductivity or a p-type conductivity,

wherein the insulating film in contact with the second region has a thinner thickness than the gate insulating film in contact with the first region.

9. A device according to

claim 1

,

wherein the capacitor wiring comprises at least one selected from the group consisting of aluminum (Al) and copper (Cu), a compound thereof, and a compound material formed of a combination thereof.

2. A semiconductor device comprising:

a pixel thin film transistor in a pixel portion;

a storage capacitor in the pixel portion;

the pixel thin film transistor including;

a first region of a semiconductor film having a channel forming region, a source region and a drain region;

a gate insulting film being in contact with the first region;

a gate electrode being formed on the gate insulating film;

wherein the pixel thin film transistor is an n-channel thin film transistor;

the storage capacitor including;

a second region of the semiconductor film;

an insulting film being in contact with the second region;

a storage wiring being formed on the insulating film,

wherein the second region includes an impurity to impart one conductivity at a concentration in a range of 1×

10²⁰ to 1×

10²¹ atoms/cm³,

wherein the insulating film in contact with the second region has a thinner thickness than the gate insulating film in contact with the first region.

19. A device according to

claim 2

,

wherein the capacitor wiring comprises at least one selected from the group consisting of aluminum (Al) and copper (Cu), a compound thereof, and a compound material formed of a combination thereof.

3. A semiconductor device comprising:

a pixel portion and a driver circuit portion being formed over a substrate;

the driver circuit including a p-channel thin film transistor and an n-channel thin film transistor;

the n-channel thin film transistor having a semiconductor film, a gate insulating film being in contact with the semiconductor film and a gate electrode being formed on the gate insulating film;

the semiconductor film including a channel forming region, a source region, a drain region, at least an LDD region,

wherein the gate electrode includes a first conductive layer and a second conductive layer,

wherein the second conductive layer is overlapped with the LDD region with the gate insulating film interposed therebetween.

4. A semiconductor device comprising:

a pixel portion and a driver circuit portion being formed over a substrate;

the pixel portion including a pixel thin film transistor and a storage capacitor;

the pixel thin film transistor including;

a first region of a first semiconductor film having a first channel forming region, a first source region and a first drain region;

a first gate insulting film being in contact with the first region;

a first gate electrode being formed on the first gate insulating film;

wherein the pixel thin film transistor is a first n-channel thin film transistor;

the storage capacitor including;

a second region of the first semiconductor film;

an insulting film being in contact with the second region;

a storage wiring being formed on the insulating film;

the driver circuit including a p-channel thin film transistor and a second n-channel thin film transistor;

the second n-channel thin film transistor having a second semiconductor film, a second gate insulating film being in contact with the second semiconductor film and a second gate electrode being formed on the second gate insulating film;

the second semiconductor film including a second channel forming region, a second source region, a second drain region, at least an LDD region;

wherein the second gate electrode includes a first conductive layer and a second conductive layer;

wherein the second conductive layer is overlapped with the LDD region with the second gate insulating film interposed therebetween, wherein the second conductive layer comprises a same material as the capacitor wiring,

wherein the insulating film in contact with the second region has a thinner thickness than the first gate insulating film in contact with the first region.

5. A device according to

claim 4

,

wherein each of the second conductive layer and the capacitor wiring comprises at least one selected from the group consisting of aluminum (Al) and copper (Cu), a compound thereof, and a compound material formed of a combination thereof.

6. A device according to

claim 4

,

wherein the first conductive layer comprises at least one element selected from the group consisting of tungsten (W), tantalum (Ta), titanium (Ti), and molybdenum (Mo), a compound thereof, a compound formed of a combination thereof, a nitride thereof, and a silicide thereof.

20. A device according to

claim 4

,

wherein the capacitor wiring comprises at least one selected from the group consisting of aluminum (Al) and copper (Cu), a compound thereof, and a compound material formed of a combination thereof.

7. A semiconductor device comprising:

a pixel portion and a driver circuit portion being formed over a substrate;

the pixel portion including a first n-channel thin film transistor and a storage capacitor;

the storage capacitor including;

a first semiconductor film;

an insulting film being in contact with the first semiconductor film, said insulating film functioning as a dielectric of the storage capacitor;

a storage wiring being formed on the insulating film;

wherein the first semiconductor film includes an impurity to impart one conductivity at a concentration in a range of 1×

10²⁰ to 1×

10²¹ atoms/cm³;

the driver circuit including a p-channel thin film transistor and a second n-channel thin film transistor;

each of the p-channel the second n-channel thin film transistors having a second semiconductor film, a gate insulating film being in contact with the second semiconductor film and a gate electrode being formed on the gate insulating film,

wherein the gate electrode has a tapered portion,

wherein the insulating film in a region where the storage capacitor is formed has a thinner thickness than in a region where the first n-channel thin film transistor is formed.

21. A device according to

claim 7

,

wherein the capacitor wiring comprises at least one selected from the group consisting of aluminum (Al) and copper (Cu), a compound thereof, and a compound material formed of a combination thereof.

8. A semiconductor device comprising:

a pixel portion and a driver circuit portion being formed over a substrate;

the pixel portion including a first n-channel thin film transistor and a storage capacitor;

the first n-channel thin film transistor including;

a first semiconductor film having a first channel forming region, at least a first LDD region out of the first channel forming region, a first source region or a first drain region out of the first LDD region;

a first gate insulting film being in contact with the first semiconductor film;

a first gate electrode being formed on the first gate insulating film;

the driver circuit including a p-channel thin film transistor and a second n-channel thin film transistor;

the second n-channel thin film transistor including;

a second semiconductor film having a second channel forming region, at least a second LDD region out of the second channel forming region, a second source region or a second drain region out of the second LDD region;

a second gate insulating film being in contact with the second semiconductor film;

a second gate electrode being formed on the second gate insulating film,

wherein each of the first gate electrode of the first n-channel thin film transistor in the pixel portion and the second gate electrode of the second n-channel thin film transistor in the driver circuit portion has a tapered portion,

wherein an insulating film continuously formed from the first gate insulating film functioning as a dielectric of the storage capacitor has a thinner thickness than other regions.

10. A method of manufacturing a semiconductor device, said method comprising the steps of:

forming an amorphous semiconductor film over a substrate having an insulating surface;

crystallizing the amorphous semiconductor film to form a crystalline semiconductor film;

forming at least a semiconductor island using the crystalline semiconductor film;

forming an insulating film in contact with the semiconductor island;

forming a first conductive layer on the insulating film;

forming a gate electrode by dry etching the first conductive layer;

adding an impurity into the semiconductor island using the gate electrode as a mask;

forming a second conductive layer on the gate electrode;

etching the second conductive layer, wherein the etched second conductive layer is overlapped with at least a portion of the first conductive layer and a portion of an LDD region of an n-channel thin film transistor in a driver circuit portion,

wherein a capacitor wiring is formed on an insulating film being in contact with a semiconductor layer in a pixel portion by etching the second conductive layer.

11. A method according to

claim 10

,

wherein the first conductive layer comprises at least one element selected from the group consisting of tungsten (W), tantalum (Ta), titanium (Ti), and molybdenum (Mo), a compound thereof, a compound formed of a combination thereof, a nitride thereof, and a silicide thereof.

12. A method according to

claim 10

,

wherein each of the second conductive layer and the capacitor wiring comprises at least one selected from the group consisting of aluminum (Al) and copper (Cu), a compound thereof, and a compound material formed of a combination thereof.

13. A method according to

claim 10

,

wherein the second conductive layer comprises a same material as the capacitor wiring.

17. A method according to

claim 10

,

wherein the semiconductor device is one selected from the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital vide disk player, a projector.

14. A method of manufacturing a semiconductor device, said method comprising the steps of:

forming a first insulating film over a substrate having an insulating surface;

forming an amorphous semiconductor film on the first insulating film;

crystallizing the amorphous semiconductor film to form a crystalline semiconductor film;

forming at least a semiconductor island using the crystalline semiconductor film;

forming a second insulating film in contact with the semiconductor island;

forming a conductive layer on the second insulating film;

selectively etching the conductive layer to form the conductive layer having a first tapered shape;

adding an impurity to impart one conductivity type into the semiconductor island at a first concentration;

etching the conductive layer having the first tapered shape to form the conductive film having a second tapered shape;

adding the impurity to impart one conductivity type into the semiconductor island at a second concentration lower than the first concentration;

forming a capacitor wiring on the second insulating film being in contact with a semiconductor layer in a pixel portion.

15. A method according to

claim 14

,

wherein each of the second conductive layer and the capacitor wiring comprises at least one selected from the group consisting of aluminum (Al) and titanium (Ti), a compound thereof, and a compound material formed of a combination thereof.

16. A method according to

claim 14

,

wherein the conductive layer having the second tapered shape has an angle in a range of 30 to 60°

.

18. A method according to

claim 14

,

wherein the semiconductor device is one selected from the group consisting of a personal computer, a video camera, a portable information terminal, a digital camera, a digital vide disk player, a projector.