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Semiconductor device and process for producing the same

  • US 20010009295A1
  • Filed: 01/17/2001
  • Published: 07/26/2001
  • Est. Priority Date: 01/18/2000
  • Status: Active Grant
First Claim
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1. A semiconductor device including one or more intermetal insulating films, each intermetal insulating film containing at least silicon atoms, oxygen atoms, and carbon atoms with the number ratio of oxygen atom to silicon atom being 1.5 or more and the number ratio of carbon atom to silicon atom being 1 to 2, and having a shrinkage in the film thickness direction at a time of oxidation of 14% or less.

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