Semiconductor light emimiting device

• US 20010011730A1
• Filed: 02/08/2001
• Published: 08/09/2001
• Est. Priority Date: 02/08/2000
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Saeki, Ryo
• Granted Patent: US 6,483,127 B2
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/105 with a resonant cavity structure
• CPC Class Codes: H01S 5/04253 having specific optical properties, e.g. transparent electrodes
• CPC Class Codes: H01S 5/18313 by oxidizing at least one of the DBR layers
• CPC Class Codes: H01S 5/1833 with more than one structure
• CPC Class Codes: H01S 5/18333 only above the active layer
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/18369 based on dielectric materials
• CPC Class Codes: H01S 5/18394 Apertures, e.g. defined by the shape of the upper electrode
• CPC Class Codes: H01S 5/3054 p-doping
• CPC Class Codes: H01S 5/3436 based on InGa(Al)P

Abstract

A semiconductor light emitting device has a substrate made of a semiconductor of a first conductivity-type, a first light reflecting layer made of a semiconductor of the first conductivity-type and provided on a main surface of the substrate, an active layer made of a semiconductor including InGaAlP and provided on the first reflecting layer, a second light reflecting layer made of a semiconductor of a second conductivity-type and provided on the active layer, a current blocking layer having an opening, only through the opening a current flowing into the active layer, a transparent electrode provided on the second light reflecting layer, a front surface electrode provided on the transparent electrode and having an opening through which emission from the active layer is extracted; and a rear surface electrode provided on a rear surface of the substrate. The current supplied by the transparent electrode located under the opening of the front surface electrode and flowing into the active layer through the opening of the current blocking layer causes the active layer to emit light, the light being reflected repeatedly between the first and the second light reflecting layers and extracted via the transparent electrode under the opening of the front surface electrode.

Claims

1. A semiconductor light emitting device comprising:

a substrate made of a semiconductor of a first conductivity-type;

a first light reflecting layer made of a semiconductor of the first conductivity-type and provided on a main surface of the substrate;

an active layer made of a semiconductor including InGaAlP and provided on the first reflecting layer;

a second light reflecting layer made of a semiconductor of a second conductivity-type and provided on the active layer;

a current blocking layer having an opening, only through the opening a current flowing into the active layer;

a transparent electrode provided on the second light reflecting layer;

a front surface electrode provided on the transparent electrode and having an opening through which emission from the active layer is extracted; and

a rear surface electrode provided on a rear surface of the substrate,

wherein the current supplied by the transparent electrode located under the opening of the front surface electrode and flowing into the active layer through the opening of the current blocking layer causes the active layer to emit light, the light being reflected repeatedly between the first and the second light reflecting layers and extracted via the transparent electrode under the opening of the front surface electrode.

2. The semiconductor light emitting device according to

claim 1

, the current blocking layer is formed by partially oxidizing at least either the first or the second light reflecting layer.

3. The semiconductor light emitting device according to

claim 1

, the current blocking layer is formed by implanting proton ions into a portion of the second light reflecting layer.

4. The semiconductor light emitting device according to

claim 1

further comprising a contact layer made of a semiconductor including carbon, the contact layer being made contact with the transparent electrode between the active layer and the transparent layer.

5. The semiconductor light emitting device according to

claim 4

, wherein the contact layer includes the carbon at 1×

10¹⁹ cm<sup>−

3</sup> or more.

6. The semiconductor light emitting device according to

claim 4

further comprising an intermediate bandgap layer provided between the contact layer and the active layer, the bandgap layer having a bandgap larger than a bandgap of the contact layer but smaller than a bandgap of the a semiconductor layer located in the vicinity of the active layer.

7. The semiconductor light emitting device according to

claim 1

, wherein the second light reflecting layer is a multi-film light reflecting layer having the uppermost layer made of InAlp, the contact layer being made of GaAs, the intermediate bandgap layer and the contact layer being stacked between the second reflecting layer and the transparent layer, the intermediate bandgap layer being made of Ga₁₋

xAl_xAs, a ratio of composition “

x”

for aluminium being in the range from 0.5 to 0.7.

8. The semiconductor light emitting device according to

claim 7

, wherein the intermediate bandgap layer includes carbon at 4×

10¹⁷ cm<sup>−

3</sup> or more.

9. A semiconductor light emitting device comprising:

a substrate made of a semiconductor of a first conductivity-type;

a first light reflecting layer made of a semiconductor of the first conductivity-type and provided on a main surface of the substrate;

an active layer made of a semiconductor including InGaAlP and provided on the first light reflecting layer;

a current blocking layer provided on the active layer and having an opening, only through the opening a current flowing into the active layer;

a transparent electrode provided on the current blocking layer and over the active layer provided under the opening of the current blocking layer

a front surface electrode provided on the transparent electrode and having an opening through which emission from the active layer is picked up;

a second light reflecting layer provided over the transparent electrode located under the opening of the front surface electrode; and

a rear surface electrode provided on a rear surface of the substrate,

wherein the current injected from the transparent electrode located under the opening of the front surface electrode and flowing into the active layer through the opening of the current blocking layer causes the active layer to emit light, the light extracted via the transparent electrode located under the opening of the front surface electrode and the second light reflecting layer.

10. The semiconductor light emitting device according to

claim 9

, wherein the current blocking layer includes either silicon oxide or silicon dioxide as a major component.

11. The semiconductor light emitting device according to

claim 9

, wherein the second light reflecting layer includes dielectric layers of at least two different types stacked by turns.

12. The semiconductor light emitting device according to

claim 9

further comprising a contact layer made of a semiconductor including carbon, the contact layer being made contact with the transparent electrode between the active layer and the transparent electrode.

13. The semiconductor light emitting device according to

claim 12

, wherein the contact layer includes the carbon at 1×

10¹⁹ cm<sup>−

3</sup> or more.

14. The semiconductor light emitting device according to

claim 12

further comprising an intermediate bandgap layer provided between the contact layer and the active layer, the bandgap layer having a bandgap larger than a bandgap of the contact layer but smaller than a bandgap of the a semiconductor layer located in the vicinity of the active layer.

15. A semiconductor light emitting device comprising:

a substrate;

a first light reflecting layer made of a semiconductor of a first conductivity-type and provided on a main surface of the substrate;

a semiconductor layer made of a semiconductor of the first conductivity-type and provided on the first light reflecting layer;

an active layer made of a semiconductor including InGaAlP and provided on a first portion of the semiconductor layer of the first conductivity-type;

a current blocking layer provided on the active layer and having an opening, only through the opening a current flowing into the active layer;

a transparent electrode provided on the current blocking layer and over the active layer provided under the opening of the current blocking layer;

a first surface electrode provided on the transparent electrode and having an opening through which emission from the active layer is picked up;

a second light reflecting layer provided over the transparent electrode located under the opening of the first surface electrode; and

a second surface electrode provided on a second portion different from the first portion of the semiconductor layer of the first conductivity-type,

wherein the current injected from the transparent electrode located under the opening of the front surface electrode and flowing into the active layer through the opening of the current blocking layer causes the active layer to emit light, the light being reflected repeatedly between the first and the second light reflecting layers.

16. The semiconductor light emitting device according to

claim 15

further comprising a contact layer of the first conductivity-type provided between the first light reflecting layer and the semiconductor layer of the first conductivity-type, the second surface electrode being provided on the second portion on the contact layer of the first conductivity-type.

17. The semiconductor light emitting device according to

claim 15

, wherein the repeatedly reflected light is extracted via the second reflecting layer.

18. The semiconductor light emitting device according to

claim 15

, wherein the repeatedly reflected light is extracted via the substrate.

19. The semiconductor light emitting device according to

claim 15

, wherein the current blocking layer includes either silicon oxide or silicon dioxide as a major component.

20. The semiconductor light emitting device according to

claim 15

, wherein the second reflecting layer includes dielectric layers of at least two different types stacked by turns.

21. The semiconductor light emitting device according to

claim 15

further comprising a contact layer made of a semiconductor including carbon, the contact layer being made contact with the transparent electrode between the active layer and the transparent electrode.

22. The semiconductor light emitting device according to

claim 21

, wherein the contact layer includes the carbon at 1×

10¹⁹ cm<sup>−

3</sup> or more.

23. The semiconductor light emitting device according to

claim 21

further comprising an intermediate bandgap layer provided between the contact layer and the active layer, the bandgap layer having a bandgap larger than a bandgap of the contact layer but smaller than a bandgap of the a semiconductor layer located in the vicinity of the active layer.