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Plasma etching method using low ionization potential gas

  • US 20010012694A1
  • Filed: 03/20/2001
  • Published: 08/09/2001
  • Est. Priority Date: 02/24/1998
  • Status: Active Grant
First Claim
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1. An etching method for use in the fabrication of integrated circuits, the method comprising:

  • providing a substrate assembly having a surface;

    providing an oxide layer over the substrate assembly;

    providing a patterned mask layer over the oxide layer exposing a portion of the oxide layer;

    providing one or more carbon and fluorine containing gases;

    providing a low ionization potential gas selected from one of xenon and krypton;

    generating a plasma using the one or more carbon and fluorine containing gases and the low ionization potential gas;

    etching the oxide layer at the exposed portion to define an opening in the oxide layer while simultaneously depositing a polymeric residue on at least a sidewall of the opening being defined; and

    continuing the etching step using the plasma generated using the one or more carbon and fluorine containing gases and the low ionization potential gas until the opening in the oxide layer is etched selectively to the surface.

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