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Semiconductor device and method of manufacturing the same

  • US 20010013617A1
  • Filed: 01/24/2001
  • Published: 08/16/2001
  • Est. Priority Date: 01/25/2000
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, which comprises the steps of:

  • forming an intermediate layer on an insulating layer formed in advance on a semiconductor substrate;

    forming a groove in the intermediate layer and the insulating layer;

    forming a first barrier layer on a surface of the intermediate layer as well as on an inner surface of the groove;

    depositing a wiring layer on a surface of the first barrier layer to thereby fill the groove with the wiring layer;

    performing a flattening treatment of a surface of the wiring layer to thereby form a buried structure consisting of the first barrier layer and a wiring inside the groove;

    removing a surface portion of the wiring to thereby permit the surface of the wiring to be recessed to a level which is lower than a surface of the insulating layer, thus forming a recessed portion;

    forming a second barrier layer on a surface of the intermediate layer as well as on an inner surface of the recessed portion;

    performing a flattening treatment of a surface of the second barrier layer, thereby allowing the surface of the intermediate layer to be exposed; and

    selectively removing the intermediate layer, thereby allowing the surface of the insulating layer to be exposed.

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