Semiconductor device and method of manufacturing the same
First Claim
1. A method of manufacturing a semiconductor device, which comprises the steps of:
- forming an intermediate layer on an insulating layer formed in advance on a semiconductor substrate;
forming a groove in the intermediate layer and the insulating layer;
forming a first barrier layer on a surface of the intermediate layer as well as on an inner surface of the groove;
depositing a wiring layer on a surface of the first barrier layer to thereby fill the groove with the wiring layer;
performing a flattening treatment of a surface of the wiring layer to thereby form a buried structure consisting of the first barrier layer and a wiring inside the groove;
removing a surface portion of the wiring to thereby permit the surface of the wiring to be recessed to a level which is lower than a surface of the insulating layer, thus forming a recessed portion;
forming a second barrier layer on a surface of the intermediate layer as well as on an inner surface of the recessed portion;
performing a flattening treatment of a surface of the second barrier layer, thereby allowing the surface of the intermediate layer to be exposed; and
selectively removing the intermediate layer, thereby allowing the surface of the insulating layer to be exposed.
2 Assignments
0 Petitions
Accused Products
Abstract
A method of manufacturing a semiconductor device, which comprises the steps of forming an intermediate layer on an insulating layer, forming a groove in the intermediate layer and the insulating layer, forming a first barrier layer on the intermediate layer, depositing a wiring layer on the first barrier layer to thereby fill the groove with the wiring layer, performing a flattening treatment of the wiring layer, removing a surface portion of the wiring to thereby permit the surface of the wiring to be recessed lower than a surface of the insulating layer, thus forming a recessed portion, forming a second barrier layer on the intermediate layer and on an inner wall of the recessed portion, performing a flattening treatment of the second barrier layer, thereby, and selectively removing the intermediate layer, exposing the insulating layer.
41 Citations
20 Claims
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1. A method of manufacturing a semiconductor device, which comprises the steps of:
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forming an intermediate layer on an insulating layer formed in advance on a semiconductor substrate;
forming a groove in the intermediate layer and the insulating layer;
forming a first barrier layer on a surface of the intermediate layer as well as on an inner surface of the groove;
depositing a wiring layer on a surface of the first barrier layer to thereby fill the groove with the wiring layer;
performing a flattening treatment of a surface of the wiring layer to thereby form a buried structure consisting of the first barrier layer and a wiring inside the groove;
removing a surface portion of the wiring to thereby permit the surface of the wiring to be recessed to a level which is lower than a surface of the insulating layer, thus forming a recessed portion;
forming a second barrier layer on a surface of the intermediate layer as well as on an inner surface of the recessed portion;
performing a flattening treatment of a surface of the second barrier layer, thereby allowing the surface of the intermediate layer to be exposed; and
selectively removing the intermediate layer, thereby allowing the surface of the insulating layer to be exposed. - View Dependent Claims (2, 3)
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4. A method of manufacturing a semiconductor device, which comprises the steps of:
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forming a groove in an insulating layer formed in advance on a semiconductor substrate;
forming a first barrier layer on a surface of the insulating layer as well as on an inner surface of the groove;
depositing a wiring layer on a surface of the first barrier layer to thereby fill the groove with the wiring layer;
performing a flattening treatment of a surface of the wiring layer to thereby allow the first barrier layer to be continuously left at least on the insulating layer throughout an entire surface of the semiconductor substrate, thereby filling the groove with a wiring;
removing a surface portion of the wiring to thereby permit the surface of the wiring to be recessed to a level which is lower than a surface of the insulating layer, thus forming a recessed portion;
forming a second barrier layer on the first barrier layer as well as on the wiring by means of an electro-plating method where the first barrier layer remaining on the insulating layer is employed as an electrode; and
performing a flattening treatment of surfaces of the second barrier layer and the first barrier layer until the surface of the insulating layer is exposed. - View Dependent Claims (5)
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6. A method of manufacturing a semiconductor device, which comprises the steps of:
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forming a conductive layer on an insulating layer formed in advance on a semiconductor substrate;
forming a groove penetrating into the conductive layer and the insulating layer;
forming a first barrier layer on a surface of the conductive layer as well as on an inner surface of the groove;
depositing a wiring layer on a surface of the first barrier layer to thereby fill the groove with the wiring layer;
performing a flattening treatment of a surface of the wiring layer to thereby allow the conductive layer to be continuously left at least on the insulating layer, thereby filling the groove with a wiring;
removing a surface portion of the wiring to thereby permit the surface of the wiring to be recessed to a level which is lower than a surface of the insulating layer, thus forming a recessed portion;
forming a second barrier layer on the conductive layer as well as on the wiring by means of an electro-plating method where the conductive layer remaining on the insulating layer is employed as an electrode; and
performing a flattening treatment of surfaces of the second barrier layer and the conductive layer until the surface of the insulating layer is exposed. - View Dependent Claims (7)
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8. A method of manufacturing a semiconductor device, which comprises the steps of:
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forming a groove in an insulating layer formed in advance on a semiconductor substrate;
forming a first barrier layer on a surface of insulating layer;
depositing a wiring layer on a surface of the first barrier layer to thereby fill the groove with the wiring layer;
performing a flattening treatment of a surface of the wiring layer to thereby forming a structure consisting of the first barrier layer and a wiring which are buried inside the groove;
performing a recess etching treatment of the wiring by making use of an etching solution comprising an oxidizing agent which is reactive to main element constituting the wiring, a complex forming agent which is capable of forming a complex together with ions of the main element constituting the wiring, and a solvent for the complex, thereby permitting the surface of the wiring to be recessed to form a recessed portion;
forming a second barrier layer on the wiring as well as on the insulating layer to thereby fill the recessed portion with the second barrier layer; and
performing a flattening treatment of a surface of the second barrier layer until the surface of the insulating layer is exposed, thereby leaving the second barrier layer inside the recessed portion. - View Dependent Claims (9, 10, 11, 12, 13, 14, 17, 18)
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15. A semiconductor device which comprises:
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an insulating layer which is provided with a groove and formed on a semiconductor substrate;
a first barrier layer formed on an inner surface of the groove of the insulating layer;
a wiring which is formed inside the groove of the insulating layer and whose surface is recessed lower than the insulating layer; and
a second barrier layer formed on the wiring;
wherein an angle between the surface of the wiring and the first barrier layer at a sidewall of the groove is 60°
or more. - View Dependent Claims (16)
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19. An etching solution for etching copper or a copper alloy, which comprises:
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an oxidizing agent of 0.01 to 10 mol/L which is reactive to copper;
a complex forming agent of 0.0001 to 1 mol/L which is capable of forming a complex together with copper ion; and
a solvent for the complex. - View Dependent Claims (20)
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Specification