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Electroplating process for avoiding defects in metal features of integrated circuit devices

  • US 20010015321A1
  • Filed: 02/28/2001
  • Published: 08/23/2001
  • Est. Priority Date: 10/26/1998
  • Status: Active Grant
First Claim
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1. A method of electroplating a metal onto a surface comprising a field region and a plurality of recessed features, the recessed features having a range of aspect ratios, the surface having a metal seed layer, the method comprising:

  • contacting the surface with an electroplating solution comprising metal ions, a suppressor additive, an accelerator additive, and a leveler additive under conditions wherein the metal seed layer is cathodically polarized with respect to the electroplating solution prior to or less than approximately 5 seconds following the contacting;

    applying a DC cathodic current density through the surface, the current density having a first value that is sufficiently small that depletion of metal ions and the additives is absent at both the field region and the recessed features, to create a substantially conformal thin conductive metal film on the surface;

    applying a DC cathodic current density having a second value through the surface, the second value such that electroplating occurs preferentially on bottoms of recessed features having the largest aspect ratios;

    increasing the current density from the second value until all recessed features have aspect ratios less than about 0.5; and

    further increasing the current density to a third value that provides a condition of conformal plating, filling said recessed features and plating metal onto the field region.

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