ENHANCED PLASMA MODE AND SYSTEM FOR PLASMA IMMERSION ION IMPLANTATION
First Claim
1. A plasma immersion ion implantation (PIII) system, said system comprising:
- a chamber;
a susceptor disposed within an interior region in said chamber, said susceptor being adapted to secure a work piece thereon;
an rf source disposed overlying said susceptor in said chamber, said rf source providing an inductive discharge to form a plasma from a gas within said chamber;
a first electro-magnetic source disposed surrounding said susceptor in said chamber, said first magnetic source providing focused magnetic field lines toward said susceptor; and
a second-electro magnetic source disposed surrounding said susceptor in said chamber, said second magnetic source providing focussed magnetic field lines toward said susceptor.
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Accused Products
Abstract
A novel plasma treatment system (200). The plasma treatment system has a chamber (14), where a vacuum is maintained. The system also has a susceptor disposed within an interior region in the chamber. The susceptor (i.e., electrostatic chuck) is adapted to secure a work piece thereon. The system has an rf source (40) disposed overlying the susceptor. The rf source provides an inductive discharge to form a plasma from a gas within the chamber. Magnetic sources (207), (209) are selectively applied to the plasma discharge. In a specific embodiment, a first magnetic source (207) is disposed surrounding the susceptor in the chamber. The first magnetic source provides focused magnetic field lines toward the susceptor. A second magnetic source (209) is disposed surrounding the susceptor, where the second magnetic source provides focussed magnetic field lines toward the susceptor. The combination of the rf source and the magnetic sources form a plasma discharge that is shaped as a “cusp” which focuses the plasma discharge.
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Citations
30 Claims
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1. A plasma immersion ion implantation (PIII) system, said system comprising:
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a chamber;
a susceptor disposed within an interior region in said chamber, said susceptor being adapted to secure a work piece thereon;
an rf source disposed overlying said susceptor in said chamber, said rf source providing an inductive discharge to form a plasma from a gas within said chamber;
a first electro-magnetic source disposed surrounding said susceptor in said chamber, said first magnetic source providing focused magnetic field lines toward said susceptor; and
a second-electro magnetic source disposed surrounding said susceptor in said chamber, said second magnetic source providing focussed magnetic field lines toward said susceptor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A plasma immersion ion implantation (PIII) source, said source comprising:
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a vacuum chamber;
a susceptor disposed within an interior region in said chamber, said susceptor being adapted to secure a work piece thereon;
an rf source disposed overlying said susceptor in said chamber, said rf source providing an inductive discharge to form a plasma from a gas within said chamber; and
a first electro-magnetic source disposed surrounding an upper portion of said chamber, said first magnetic source providing a first cusp region of said plasma toward said rf source. - View Dependent Claims (19, 20, 21, 22, 23)
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24. A method for producing a substantially pure monatomic ion species in a plasma in a chamber for plasma immersion ion implantation (PIII), the method comprising:
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providing an inductive discharge to form a plasma from a gas within said chamber;
providing a first set of focused magnetic field lines within the chamber that form a first cusp proximate a first end of the chamber; and
providing a second set of focused magnetic field lines within the chamber that form a second cusp proximate a second end of the chamber, wherein the first and second sets of magnetic field lines interact to form a third cusp intermediate the first and second cusps. - View Dependent Claims (25, 26, 27, 28, 29, 30)
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Specification