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Semiconductor light emitting device and method for producing the same

  • US 20010017874A1
  • Filed: 02/09/2001
  • Published: 08/30/2001
  • Est. Priority Date: 02/10/2000
  • Status: Active Grant
First Claim
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1. A semiconductor light emitting device comprising:

  • a substrate;

    an n-type layer provided on the substrate and made of a nitride semiconductor material;

    a multiple quantum well structure active layer including a plurality of well layers each made of InxGa(1-x-y)AlyN (O≦

    x, O≦

    y, x+y<

    1) and a plurality of barrier layers each made of InsGa(1-s-t)AltN (O≦

    s, O≦

    t, s+t<

    1), the multiple quantum well structure active layer being provided on the n-type layer; and

    a p-type layer provided on the multiple quantum well structure active layer and made of a nitride semiconductor material, wherein the p-type layer contains hydrogen, and the hydrogen concentration of the p-type layer is greater than or equal to about 1×

    1016 atoms/cm3 and less than or equal to about 1×

    1019 atoms/cm3.

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