Galvano-micromirror and its manufacture process

• US 20010019445A1
• Filed: 12/20/2000
• Published: 09/06/2001
• Est. Priority Date: 03/03/2000
• Status: Active Grant

• Current Assignee: DRNC Holdings, Inc. (InterDigital, Inc.)
• Original Assignee: Fujitsu Limited
• Inventors: Ueda, Satoshi
• Granted Patent: US 6,459,523 B2
• Time in Patent Office: Days
• US Class Current: 359/290
• CPC Class Codes: G02B 26/0841 the reflecting element being moved or deformed by electrostatic means

Abstract

A GALVANO-micromirror includes a first substrate having a light-reflective mirror face on one surface thereof and a first electrode on one or both surface(s) thereof; and a second substrate including a frame-form base, a second electrode located opposedly to the first electrode, a joint holder section located under the mirror face for holding the first substrate, and a torsion bar section located under the mirror face for connecting the frame-form base to the joint holder section and supporting the joint holder section pivotally within a range of angles, wherein a part of a surface of the first substrate on which the mirror face is not formed is joined to the joint holder section of the second substrate.

Claims

1. A GALVANO-micromirror comprising:

a first substrate having a light-reflective mirror face on one surface thereof and a first electrode on one or both surface(s) thereof; and

a second substrate including a frame-form base, a second electrode located opposedly to the first electrode, a joint holder section located under the mirror face for holding the first substrate, and a torsion bar section located under the mirror face for connecting the frame-form base to the joint holder section and supporting the joint holder section pivotally within a range of angles,

wherein a part of a surface of the first substrate on which the mirror face is not formed is joined to the joint holder section of the second substrate.

3. The GALVANO-micromirror according to

claim 1

, wherein the first and second substrates are formed of semiconductor bulk substrates.

2. A GALVANO-micromirror comprising:

a frame-form base;

a mirror section located inside the base which has, on one surface thereof, a mirror face and an electrode for electrostatic actuation; and

two torsion bar sections for connecting the base to the mirror section and supporting the mirror section pivotally within a range of angles,

wherein recesses are formed in a part of the mirror face, and the torsion bar sections are arranged in the recesses so as to connect edges of the recesses in the mirror face to parts of the base.

4. A process for manufacturing a GALVANO-micromirror comprising the steps of:

forming a mirror face of a light-reflective film on one surface of a first substrate made of a semiconductor bulk substrate, a first electrode of a metal thin film on one surface or first electrodes of thin metal films on both surfaces of the first substrate, and a joint section in a protrusive form on a surface on which the mirror face is not formed;

forming, on one surface of a second substrate made of a semiconductor bulk substrate, a second electrode opposed to the first electrode(s), a joint holder section in a protrusive form for holding the first substrate, and a torsion bar section for pivotally supporting the joint holder section within a range of angles;

forming a peripheral frame and a separation trench for separating the peripheral frame from the first substrate, on a surface of the semiconductor bulk substrate forming the first substrate on which surface the mirror face is not formed;

forming a peripheral frame and a separation trench corresponding to the peripheral frame and the separation trench formed on the first substrate, on the surface of the semiconductor bulk substrate forming the second substrate on which surface the joint holder section is formed; and

joining the first and second substrates so that the joint section of the first substrate contacts the joint holder section of the second substrate and thereafter boring the trenches through, thereby separating the substrates from the peripheral frames.

5. The process according to

claim 4

, wherein, in the case where the first electrodes are formed on both surfaces of the first substrate, a through hole is formed in the first substrate for electrical connection of the first electrodes on both surfaces.

6. A process for manufacturing a GALVANO-micromirror comprising the steps of:

forming a mirror face of a light-reflective film and a first electrode on one surface of a semiconductor bulk substrate;

forming, on another surface of the semiconductor bulk substrate, a first trench for separating a mirror section including the mirror face and the first electrode from a frame-form base to be formed in a periphery of the substrate, and a second trench for forming a recess in the mirror face and two torsion bar sections, the second trench being formed under the torsion bar sections and the torsion bar sections being formed within the recess in the mirror face for supporting the mirror face pivotally within a range of angles;

boring through the first trench, thereby separating the mirror section from the frame-form base; and

boring through the recess in the mirror face so that the mirror section is connected to the frame-form base by the torsion bar sections,

wherein the step of separating the mirror section from the frame-form base and the step of boring through the recess in the mirror face are performed by etching.

7. The process according to

claim 6

, wherein the recess in the mirror face is so formed that its area is negligibly small with respect to the area of the entire mirror face.

8. The process according to

claim 6

, wherein the step of separating the mirror section from the base by the first separation trench and the step of boring through the recess in the mirror face are performed by dry etching.

9. The process according to

claim 6

, wherein the first electrode is also formed on another surface of the semiconductor bulk substrate in a position corresponding to the first electrode formed in said one surface, and a through hole is formed for electrical connection of the first electrodes on both the surfaces.