Chamber material made of Al alloy and heater block

• US 20010019777A1
• Filed: 02/02/2001
• Published: 09/06/2001
• Est. Priority Date: 02/04/2000
• Status: Active Grant

• Current Assignee: Klaus Schmidt
• Original Assignee: Klaus Schmidt
• Inventors: Sawada, Hiroki, Tanaka, Toshiyuki, Matsuura, Hiroshi, Hisamoto, Jun, Wada, Koji
• Granted Patent: US 6,521,046 B2
• Time in Patent Office: Days
• US Class Current: 428/472.2
• CPC Class Codes: H01J 37/32467 Material

Abstract

A chamber material made of Al alloy excellent in thermal cracking resistance and chemical and/or physical corrosion resistance and capable of reducing contamination excellently and further having excellent and wide applicable brazing property in a high temperature corrosive circumstance, in which the substrate aluminum material for the chamber material made of Al alloy having an anodized film comprises 0.1 to 2.0% Si, 0.1 to 3.5% Mg, 0.02 to 4.0% Cu on the mass % basis and the balance of Al and impurity element with Cr in the impurity elements being less than 0.04%. Preferably, Fe is 0.1% or less and Mn is 0.04% or less in the impurity element and, further, the total sum of impurity elements other than Cr and Mn being restricted to 0.1$ or less. This invention can be utilized suitably to various materials used in high temperature corrosive circumstance, particularly, in high temperature corrosive gas or plasma atmosphere.

Claims

1. A chamber material made of Al alloy having an anodized film in which portions other than the film of the material has a composition comprising, on the mass % basis:

Si;

0.1-2.0%,

Mg;

0.1-3.5% and

Cu;

0.02-4.0%

and the balance of Al as the essential ingredients, as well as other impurity elements in which Cr is less than 0.04% in the impurity elements.

2. A chamber material made of Al alloy as defined in

claim 1

, wherein

Fe is 0.1% or less, and

Mn is 0.04% or less

on the mass % basis in the impurity element.

3. A chamber material made of Al alloy as defined in

claim 2

, wherein the total of the impurity elements other than Fe, Cr and Mn is 0.1% or less by mass %.

4. A chamber material as defined in

claim 1

, wherein the chamber material is used in a plasma processing apparatus for applying predetermined processing to products to be processed by plasmas or active species obtained by conversion into plasmas in the chamber and has an anodized film at a position exposed to plasmas.

5. A chamber material made of Al alloy disposed in a plasma processing apparatus for applying predetermined processing to products to be processed by plasmas or active spaces obtained by conversion into plasmas in a chamber, in which the chamber material has a composition comprising, on the mass % basis;

Si;

0.2-0.6%,

Mg;

0.45-0.9%,

Cu;

0.02-4.0% and

the balance of Al as the essential ingredients, as well as other impurity elements.

6. A chamber material as defined in

claim 5

, wherein the chamber material is a heater block main body.

7. A chamber material as defined in

claim 6

, having an anodized film on the surface of the block body at a position exposed to plasmas by a plasma processing apparatus.

8. A chamber material as defined in

claim 5

, wherein the chamber material is a carrier plate disposed detachably by way of an engaging member to the block body at a position for carrying the product to be processed.

9. A chamber material as defined in

claim 8

, wherein the carrier plate has an anodized film at a position exposed in the plasmas by the plasma processing apparatus.

10. A heater block disposed in a plasma processing apparatus, having a block body provided with an internal heating means for heating the position at which a product to be processed is carried, in which the block body comprises, on the mass % basis;

Si;

0.2-0.6%,

Mg;

0.45-0.9%,

Cu;

0.02-4.0% and

the balance of Al as the essential ingredients, as well as other impurity elements.

11. A heater block as defined in

claim 10

, having an anodized film at a position on the surface of the block body exposed in the plasmas by the plasma processing apparatus.