Inductively coupled plasma CVD
First Claim
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1. A method of filling gaps between electrically conductive lines on a semiconductor substrate comprising the steps of:
- providing a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor;
introducing a process gas comprising a noble gas into the process chamber wherein the amount of noble gas is sufficient to assist in gap filling; and
growing a dielectric film on the substrate, the dielectric film being deposited in gaps between electrically conductive lines on the substrate.
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Abstract
A method of depositing a dielectric film on a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor. Gap filling between electrically conductive lines on a semiconductor substrate and depositing a cap layer are achieved. Films having significantly improved physical characteristics including reduced film stress are produced by heating the substrate holder on which the substrate is positioned in the process chamber.
92 Citations
58 Claims
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1. A method of filling gaps between electrically conductive lines on a semiconductor substrate comprising the steps of:
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providing a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor;
introducing a process gas comprising a noble gas into the process chamber wherein the amount of noble gas is sufficient to assist in gap filling; and
growing a dielectric film on the substrate, the dielectric film being deposited in gaps between electrically conductive lines on the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A method of filling gaps between electrically conductive lines on a semiconductor substrate and depositing a capping layer over the filled gaps comprising the steps of:
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providing a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor;
filling gaps between electrically conductive lines on the substrate by introducing a first process gas and growing a first dielectric film in the gaps at a first deposition rate; and
depositing a capping layer comprising a second dielectric film onto the surface of said first dielectric film by introducing a second process gas into the process chamber, said layer being deposited at a second deposition rate that is higher than the first deposition rate. - View Dependent Claims (26, 27, 28, 29, 30)
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31. A method of depositing a dielectric film substrate comprising the steps of:
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providing a substrate in a process chamber of an inductively coupled plasma-enhanced chemical vapor deposition reactor wherein the substrate is positioned on a substrate holder;
introducing a process gas comprising, a noble gas into the process chamber wherein the amount of noble gas is sufficient to cause sputter etching;
controlling the temperature on a surface of the substrate holder; and
energizing the process gas into a plasma state by inductively coupling RF energy into the process chamber and growing a dielectric film on the substrate. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49)
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50. An inductively coupled plasma processing system comprising:
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a plasma processing chamber;
a substrate holder supporting a substrate within said processing chamber wherein the substrate holder is at a temperature of about 80°
C. to 200°
C.;
an electrically-conductive coil disposed outside said processing chamber;
means for introducing a process gas into said processing chamber; and
an RF energy source which inductively couples RF energy into the processing chamber to energize the process gas into a plasma state. - View Dependent Claims (51, 52, 53, 54, 55, 56, 57, 58)
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Specification