Method and apparatus for analyzing the state of generation of foreign particles in semiconductor fabrication process

• US 20010021015A1
• Filed: 03/14/2001
• Published: 09/13/2001
• Est. Priority Date: 04/02/1991
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Nishiyama, Hidetoshi, Ohshima, Yoshimasa, Matsuoka, Kazuhiko, Noguchi, Minori, Kembo, Yukio, Morioka, Hiroshi, Shigyo, Yoshiharu
• Granted Patent: US 6,894,773 B2
• Time in Patent Office: Days
• US Class Current: 356/237.5
• CPC Class Codes: B82Y 15/00 Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
• CPC Class Codes: G01N 2021/8822 Dark field detection
• CPC Class Codes: G01N 21/94 Investigating contamination, e.g. dust G01N21/85 takes precedence
• CPC Class Codes: G01N 21/9501 Semiconductor wafers manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G01N 21/95623 using a spatial filtering method per se G02B
• CPC Class Codes: G01R 31/308 using non-ionising electromagnetic radiation, e.g. optical radiation investigating or analysing materials by the use of optical means G01N21/00; image analysis G06T7/00
• CPC Class Codes: H01J 2237/022 Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
• CPC Class Codes: H01J 2237/0225 Detecting or monitoring foreign particles
• CPC Class Codes: H01J 37/00 Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof H01J33/00, H01J40/00, H01J41/00, H01J47/00, H01J49/00 take precedence
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring
• CPC Class Codes: H01L 21/67288 Monitoring of warpage, curvature, damage, defects or the like
• CPC Class Codes: H01L 21/681 using optical controlling means
• CPC Class Codes: H01L 22/12 for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14

Abstract

A processing method for semiconductor devices in a semiconductor fabrication line includes processing a substrate in a first processing apparatus, transferring the substrate processed in the first processing apparatus to a detecting apparatus without removal of the substrate from the semiconductor fabrication line while continuing fabrication of the semiconductor devices, detecting foreign particle defects on the substrate transferred to the detecting apparatus, and determining a foreign particle generation condition of the processing apparatus based on a data from the detecting.

Claims

1. A processing method for semiconductor devices in a semiconductor fabrication line, comprising the steps of:

processing a substrate in a first processing apparatus;

transferring the substrate processed in the first processing apparatus to a detecting apparatus without removal of the substrate from the semiconductor fabrication line while continuing fabrication of the semiconductor devices;

detecting foreign particle defects on the substrate transferred to the detecting apparatus;

determining a foreign particle generation condition of the processing apparatus based on a data from the detecting;

transferring the substrate detecting in the detecting apparatus to a second processing apparatus in the semiconductor fabrication line; and

processing the substrate in the second processing apparatus, wherein an amount of the foreign particle defects detected in the detecting step is stored in a memory.

2. A processing method according to

claim 1

, wherein in the detecting step, detection is performed in a predetermined area of the substrate.

3. A processing method according to

claim 1

, wherein in the detecting step, detection is completed within a processing time in the processing step.

4. A processing method for semiconductor devices in a semiconductor fabrication line, comprising:

processing a substrate in a first processing apparatus;

transferring the substrate processed in the first processing apparatus to a detecting apparatus without removal of the substrate from the semiconductor fabrication line while continuing fabrication of the semiconductor devices;

detecting foreign particle defects on the substrate transferred to the detecting apparatus within a processing time in the step of processing;

storing a data of foreign particle defects detected at the detecting step in a memory; and

controlling an operation of the semiconductor fabrication line in accordance with the data of foreign particle defects detected.

5. A processing method according to

claim 4

, wherein in the detecting step, detection is performed in a predetermined area of the substrate.

6. A processing method for semiconductor devices in a semiconductor fabrication line, comprising:

processing a substrate in a first processing apparatus which is a component of the semiconductor fabrication line;

detecting foreign particle defects on the substrate processed in the first processing apparatus without removal of the substrate from the semiconductor fabrication line while continuing fabrication of the semiconductor devices;

counting an amount of foreign particle defects detected at the detecting step; and

controlling an operation of the semiconductor fabrication line in accordance with the data of foreign particle defects detected.

7. A processing method according to

claim 6

, wherein data of the amount of foreign particle defects of the substrate counted in the counting step is stored in a memory.

8. A processing method for semiconductor devices in a semiconductor fabrication line, comprising:

processing a substrate in a processing apparatus which is a component of the semiconductor fabrication line;

detecting foreign particle defects on the substrate processed in the processing apparatus without removal of the substrate from the semiconductor fabrication line while continuing fabrication of the semiconductor devices;

obtaining information of distribution of foreign particle defects on the substrate and storing the obtained information in a memory;

wherein the step of detecting foreign particle defects is performed in real time.

9. A processing method according to

claim 8

, further comprising a step of determining a foreign particle generation condition of the processing apparatus using information of detecting.

10. A processing method for semiconductor devices in a semiconductor fabrication line, comprising:

processing a substrate in a processing apparatus which is a component of the semiconductor fabrication line;

detecting foreign particle defects on the substrate processed in the processing apparatus without removal of the substrate from the semiconductor fabrication line while continuing fabrication of the semiconductor devices; and

determining a foreign particle generation condition of the processing apparatus using information of detecting.

11. A processing method according to

claim 10

, wherein if the foreign particle generation condition of the processing apparatus is determined to be abnormal in the determining step, information of the abnormality is outputted.