Method of manufacturing a device by means of a mask phase-shifiting mask for use in said method
First Claim
Patent Images
1. A method of manufacturing a device in at least one layer on a substrate, comprising the steps of:
- imaging, by means of projection radiation having a wavelength λ and
a projection system having a numerical aperture NA, a specific phase shifting mask pattern, comprising pattern features corresponding to device features to be configured in said layer, on a radiation-sensitive layer provided on said layer, and removing material from, or adding material to, areas of said layer which are delineated by the mask pattern image, the smallest device features having a width which is smaller than λ
/NA, characterized in that use is made of a mask pattern comprising mask features which are constituted by the combination of a phase transition determining the position of the imaged mask feature in the device layer and the length of the imaged mask feature, and two sub-resolution assist features flanking the phase transition and having a specific mutual distance which substantially determines the width of the imaged mask feature in the device layer.
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Abstract
A method is described for imaging, by means of projection radiation, a phaseshifting mask pattern on a substrate for the purpose of configuring device features in the substrate. By using a mask pattern comprising mask features constituted by a phase transition (22) and two sub-resolution assist features (40,41), arranged symmetrically with respect to the phase transition and having a mutual distance (p), device features having a wide variety of widths can be obtained by varying only the mutual distance.
20 Citations
13 Claims
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1. A method of manufacturing a device in at least one layer on a substrate, comprising the steps of:
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imaging, by means of projection radiation having a wavelength λ and
a projection system having a numerical aperture NA, a specific phase shifting mask pattern, comprising pattern features corresponding to device features to be configured in said layer, on a radiation-sensitive layer provided on said layer, andremoving material from, or adding material to, areas of said layer which are delineated by the mask pattern image, the smallest device features having a width which is smaller than λ
/NA, characterized in that use is made of a mask pattern comprising mask features which are constituted by the combination of a phase transition determining the position of the imaged mask feature in the device layer and the length of the imaged mask feature, and two sub-resolution assist features flanking the phase transition and having a specific mutual distance which substantially determines the width of the imaged mask feature in the device layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification