Semiconductor device

• US 20010023988A1
• Filed: 03/26/2001
• Published: 09/27/2001
• Est. Priority Date: 03/27/2000
• Status: Active Grant

• Current Assignee: Toshiba Memory Corporation (Kioxia Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Usui, Takamasa, Hatano, Masaaki
• Granted Patent: US 6,909,191 B2
• Time in Patent Office: Days
• US Class Current: 257/754
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05093 of a plurality of vias
• CPC Class Codes: H01L 2224/05096 Uniform arrangement, i.e. array
• CPC Class Codes: H01L 2224/05546 Dual damascene structure
• CPC Class Codes: H01L 2224/05556 in side view
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 24/03 Manufacturing methods
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01007 Nitrogen [N]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01041 : Niobium [Nb]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/05042 : Si3N4
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/207 : Diameter ranges

Abstract

There is provided a semiconductor device comprising a Cu film provided above a main surface of a semiconductor substrate and used as a wiring, an intermediate layer formed at least on the Cu film, and an Al film formed on the intermediate layer and used as a pad, wherein the intermediate layer comprises a refractory metal nitride film and a refractory metal film formed on the refractory metal nitride film.

Claims

1. A semiconductor device comprising:

a Cu film provided above a main surface of a semiconductor substrate and used as a wiring;

an intermediate layer formed at least on the Cu film; and

an Al film formed on the intermediate layer and used as a pad;

wherein the intermediate layer comprises a refractory metal nitride film and a refractory metal film formed on the refractory metal nitride film.

2. The semiconductor device according to

claim 1

, wherein the intermediate layer has a first portion which contacts the Cu film and a second portion which does not contact the Cu film, and an insulating film contacts the second portion.

3. The semiconductor device according to

claim 1

, wherein the refractory metal film contains at least one refractory metal and the refractory metal nitride film contains at least one refractory metal that is identical to the at least one refractory metal contained in the refractory metal film.

4. The semiconductor device according to

claim 1

, wherein the refractory metal film contains at least one metal selected from the group consisting of Ta, Nb, Ti, W and V, and the refractory metal nitride film contains at least one metal selected from the group consisting of Ta, Nb, Ti, W and V.

5. A semiconductor device comprising:

a Cu film provided above a main surface of a semiconductor substrate and used as a wiring;

an intermediate layer formed at least on the Cu film; and

an Al film formed on the intermediate layer and used as a pad;

wherein the intermediate layer comprises a refractory metal film and a refractory metal nitride film formed on the refractory metal film.

6. The semiconductor device according to

claim 5

, wherein the intermediate layer has a first portion which contacts the Cu film and a second portion which does not contact the Cu film, and an insulating film contacts the second portion.

7. The semiconductor device according to

claim 5

, wherein the refractory metal film contains at least one refractory metal and the refractory metal nitride film contains at least one refractory metal that is identical to the at least one refractory metal contained in the refractory metal film.

8. The semiconductor device according to

claim 5

, wherein the refractory metal film contains at least one metal selected from the group consisting of Ta, Nb, Ti, W and V, and the refractory metal nitride film contains at least one metal selected from the group consisting of Ta, Nb, Ti, W and V.

9. A semiconductor device comprising:

a Cu film provided above a main surface of a semiconductor substrate and used as a wiring;

an intermediate layer formed at least on the Cu film; and

an Al film formed on the intermediate layer and used as a pad;

wherein the intermediate layer comprises a first refractory metal film, a refractory metal nitride film formed on the first refractory metal film, and a second refractory metal film formed on the refractory metal nitride film.

10. The semiconductor device according to

claim 9

, wherein the intermediate layer has a first portion which contacts the Cu film and a second portion which does not contact the Cu film, and an insulating film contacts the second portion.

11. The semiconductor device according to

claim 9

, wherein the first refractory metal film contains at least one refractory metal, the refractory metal nitride film contains at least one refractory metal that is identical to the at least one refractory metal contained in the first refractory metal film, and the second refractory metal film contains at least one refractory metal that is identical to the at least one refractory metal contained in the first refractory metal film.

12. The semiconductor device according to

claim 9

, wherein the first refractory metal film contains at least one metal selected from the group consisting of Ta, Nb, Ti, W and V, the refractory metal nitride film contains at least one metal selected from the group consisting of Ta, Nb, Ti, W and V, and the second refractory metal film contains at least one metal selected from the group consisting of Ta, Nb, Ti, W and V.