Semiconductor device
First Claim
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1. A semiconductor device comprising:
- a Cu film provided above a main surface of a semiconductor substrate and used as a wiring;
an intermediate layer formed at least on the Cu film; and
an Al film formed on the intermediate layer and used as a pad;
wherein the intermediate layer comprises a refractory metal nitride film and a refractory metal film formed on the refractory metal nitride film.
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Abstract
There is provided a semiconductor device comprising a Cu film provided above a main surface of a semiconductor substrate and used as a wiring, an intermediate layer formed at least on the Cu film, and an Al film formed on the intermediate layer and used as a pad, wherein the intermediate layer comprises a refractory metal nitride film and a refractory metal film formed on the refractory metal nitride film.
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Citations
12 Claims
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1. A semiconductor device comprising:
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a Cu film provided above a main surface of a semiconductor substrate and used as a wiring;
an intermediate layer formed at least on the Cu film; and
an Al film formed on the intermediate layer and used as a pad;
wherein the intermediate layer comprises a refractory metal nitride film and a refractory metal film formed on the refractory metal nitride film. - View Dependent Claims (2, 3, 4)
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5. A semiconductor device comprising:
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a Cu film provided above a main surface of a semiconductor substrate and used as a wiring;
an intermediate layer formed at least on the Cu film; and
an Al film formed on the intermediate layer and used as a pad;
wherein the intermediate layer comprises a refractory metal film and a refractory metal nitride film formed on the refractory metal film. - View Dependent Claims (6, 7, 8)
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9. A semiconductor device comprising:
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a Cu film provided above a main surface of a semiconductor substrate and used as a wiring;
an intermediate layer formed at least on the Cu film; and
an Al film formed on the intermediate layer and used as a pad;
wherein the intermediate layer comprises a first refractory metal film, a refractory metal nitride film formed on the first refractory metal film, and a second refractory metal film formed on the refractory metal nitride film. - View Dependent Claims (10, 11, 12)
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Specification