Method for removing photoresist and residues from semiconductor device surfaces

• US 20010024769A1
• Filed: 02/08/2001
• Published: 09/27/2001
• Est. Priority Date: 02/08/2000
• Status: Abandoned Application

• Current Assignee: Matrix Integrated Systems, Inc. (Axcelis Technologies Incorporated)
• Original Assignee: Matrix Integrated Systems, Inc. (Axcelis Technologies Incorporated)
• Inventors: Stepp, Todd, Donoghue, Kevin, Vanbaekel, Kristel, Cox, Gerald M.
• Application Number:
  US09/780,873
• Publication Number:
  US 20010024769A1
• Time in Patent Office: Days
• US Class Current: 430/329
• CPC Class Codes: G03F 7/427 using plasma means only
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes
• CPC Class Codes: H01L 21/31138 by dry-etching

Abstract

The present invention is a novel process for removing photoresist, post-etch polymers, and other assorted residues from semiconductor devices incorporating low-κ dielectric materials. In general the invention comprehends using a substantially oxygen free reducing plasma that is preferably high in hydrogen content, rather than the oxidizing plasma typically used. The invention generally comprises the steps of (a) introducing a semiconductor device including a dielectric material comprising an organic silicon glass into a chamber, (b) introducing effective amounts of a hydrogen containing gas such as ammonia or methane, and (c) decomposing the gases and plasma phase reacting the decomposed gases with the photoresist and or other residues to volatilize the residues. In one preferred embodiment of the method the etchant gasses include ammonia, helium, and a forming gas preferably comprising hydrogen and nitrogen. In a second preferred embodiment, the etchant gasses include ammonia and a forming gas comprising hydrogen and helium. In a third preferred embodiment, the forming gas is replaced with water vapor preferably created in a catalytic moisture generator by combining hydrogen in a helium carrier gas, with oxygen.

Claims

1. A method for removing photoresist and for removing organic and inorganic residues from the surface of a semiconductor device, the method comprising:

(a) placing a semiconductor device, having a residue formed thereon, into a reaction chamber,

(b) creating and maintaining a substantially oxygen free environment within the reaction chamber

(c) introducing etchant gasses into the reaction chamber, the etchant gasses including a hydrogen containing gas selected from the group consisting of CH₄ and NH₃,

(d) applying energy to the etchant gasses to generate a plasma,

(e) exposing the semiconductor device to the plasma for a selected period of time.

2. The method of

claim 1

, wherein the etchant gasses include a hydrogen containing forming gas.

3. The method of

claim 2

, wherein the hydrogen containing forming gas includes a dilutant selected from the group consisting of nitrogen, helium, argon, or nitrogen.

4. The method of

claim 1

, wherein water vapor is introduced to the reaction chamber.

5. The method of

claim 1

wherein the semiconductor device comprises a low-k dielectric material.

6. The method of

claim 5

wherein the low-k dielectric material is an organo-silicate dielectric material.

7. A method for removing photoresist and for removing organic and inorganic residues from the surface of a semiconductor device, the method comprising:

(a) placing a semiconductor device comprising a low-k dielectric material, into a reaction chamber, the semiconductor device having a residue formed thereon,

(c) creating and maintaining a substantially oxygen free environment within the reaction chamber

(b) introducing etchant gasses into the reaction chamber, the etchant gasses including a hydrogen containing gas,

(c) applying energy to the etchant gasses to generate a plasma,

(d) exposing the semiconductor device to the plasma for a selected period of time.

8. The method of

claim 7

, wherein the hydrogen containing gas comprises at least one gas selected from the group consisting of CH₄ and NH₃.

9. The method of

claim 7

, wherein the etchant gasses include a hydrogen containing forming gas.

10. The method of

claim 7

, wherein the hydrogen containing forming gas includes a dilutant selected from the group consisting of helium, argon, or nitrogen.

11. The method of

claim 7

, wherein water vapor is introduced to the reaction chamber.

12. A method for removing photoresist and for removing organic and inorganic residues from the surface of a semiconductor device, the method comprising:

(a) placing a semiconductor device comprising a low-k dielectric material, into a reaction chamber, the semiconductor device having a residue formed thereon,

(b) creating and maintaining a substantially oxygen free environment within the reaction chamber

(c) introducing etchant gasses into the reaction chamber, the etchant gasses including a hydrogen containing gas selected from the group consisting of ammonia and methane,

(d) applying energy to the etchant gasses to generate a plasma,

(d) exposing the semiconductor device to the plasma for a selected period of time.

13. The method of

claim 12

, wherein the etchant gasses include a hydrogen containing forming gas.

14. The method of

claim 13

, wherein the hydrogen containing forming gas includes a dilutant selected from the group consisting of, helium, argon, or nitrogen.

15. The method of

claim 12

, wherein water vapor is introduced to the reaction chamber.

16. The method of

claim 15

, wherein water vapor is generated using a catalytic moisture generator.